Zener diode is used for:-

1.  Rectification

2.  Stabilisation

3.  Amplification

4.  Producing oscillations in an oscillator

A semiconductor is known to have an electron concentration of $8\times {10}^{13}<mspace\; width="1em"></mspace>per<mspace\; width="1em"></mspace>c{m}^2$ and hole concentration $5\times {10}^{12}<mspace\; width="1em"></mspace>per<mspace\; width="1em"></mspace>c{m}^3$. The semiconductor is

1.  n type

2.  p type

3.  Intrinsic 

4.  None of these 

A Ge specimen is doped with Al. The concentration of acceptor atoms is $={10}^{21}<mspace\; width="1em"></mspace>\mathrm{atoms}/{\mathrm{m}}^3$. Given that the intrinsic concentration of electrons in the specimen is ${10}^{19}/m^3$. The new electron concentration is

1.  ${10}^{17}/m^3$

2.  ${10}^{15}/m^3$

3.  ${10}^4/m^3$

4.  ${10}^2/m^3$

How many NAND gates are used to form AND gate?

1.  1

2.  2

3.  3

4.  4

In the half-wave rectifier circuit shown. Which one of the following wave forms is true for ${\mathrm{V}}_{\mathrm{CD}}$, the output across C and D?

1.		2.
3.		4.

The temperature (T) dependence of resistivity ($\rho$) of a semiconductor is represented by

1. 

2. 

3. 

4. 

The diagrams below show energy band structures for three silicon semiconductor samples labelled \(X,Y,\) and \(Z.\)

Based on these energy band diagrams, which statement correctly identifies the doping type for each sample?

The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbing energy is

(1) 10888 Å                   

(2) 1088.8 Å

(3) 108.88 Å                   

(4) 10.888 Å

Let ${\mathrm{n}}_{\mathrm{P}}$ and ${\mathrm{n}}_{\mathrm{e}}$ be the number of holes and conduction electrons respectively in a semiconductor. Then

(1) ${\mathrm{n}}_{\mathrm{P}}$>${\mathrm{n}}_{\mathrm{e}}$ in an intrinsic semiconductor

(2) ${\mathrm{n}}_{\mathrm{P}}$=${\mathrm{n}}_{\mathrm{e}}$ in an extrinsic semiconductor

(3) ${\mathrm{n}}_{\mathrm{P}}$=${\mathrm{n}}_{\mathrm{e}}$ in an intrinsic semiconductor

(4) ${\mathrm{n}}_{\mathrm{e}}$<${\mathrm{n}}_{\mathrm{P}}$ in an intrinsic semiconductor

Which of the following logic gate is a universal gate?
1. OR
2. NOT
3. AND
4. NOR