The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:
1. | sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively. |
2. | sample X is undoped while both samples Y and Z have been doped with a fifth group impurity. |
3. | sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped. |
4. | sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively. |
An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)
A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is m wide, the intensity of the electric field in this region is:
1. | \(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) | 2. | \(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) |
3. | \(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) | 4. | \(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) |
If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\)
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)
The current through an ideal p-n junction diode shown in the circuit will be:
1. 5 A
2. 0.2 A
3. 0.6 A
4. Zero
Which logic gate is represented by the following combination of logic gates?
1. OR
2. NAND
3. AND
4. NOR
In a p-n junction diode not connected to any circuit:
1. | the potential is the same everywhere. |
2. | the P-type is at higher potential than the N-type side. |
3. | there is an electric field at the junction directed from the N- type side to the P- type side. |
4. | there is an electric field at the junction directed from the P-type side to the N-type side. |
When a forward bias is applied to a p-n junction, then what happens to the potential barrier , and the width of charge depleted region x?
1. | \(V_B\) increases, x decreases | 2. | \(V_B\) decreases, x increases |
3. | \(V_B\) increases, x increases | 4. | \(V_B\) decreases, x decreases |
Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?
1. | 2. | ||
3. | 4. |
In a given circuit as shown the two input waveforms A and B are applied simultaneously. The resultant waveform Y is:
1. | 2. | ||
3. | 4. |