- 1(current)
Q. No.In figure given below \(V_0\) is the potential barrier across a \(\mathrm{p\text-n}\) junction, when no battery is connected across the junction.
| 1. | \(1\) and \(3\) both correspond to forward bias of junction. |
| 2. | \(3\) corresponds to forward bias of junction and \(1\) corresponds to reverse bias of junction. |
| 3. | \(1\) corresponds to forward bias and \(3\) corresponds to reverse bias of junction. |
| 4. | \(3\) and \(1\) both correspond to reverse bias of junction. |
Subtopic: Â PN junction |
 64%
Level 2: 60%+
Hints
In the figure given below, assuming the diodes to be ideal,
| 1. | \(D_1\) is forward biased and \(D_2\) is revers-biased and hence current flows from \(A\) to \(B\). |
| 2. | \(D_2\) is forward biased and \(D_1\) is reverse-biased and hence no current flows from \(B\) to \(A\) and vice-versa. |
| 3. | \(D_1\) and \(D_2\) are both forward-biased and hence current flows from \(A\) to \(B\). |
| 4. | \(D_1\) and \(D_2\) are both reverse-biased and hence no current flows from \(A\) to \(B\) and vice-versa. |
Subtopic: Â PN junction |
 84%
Level 1: 80%+
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A \(220~\text{V}\) AC supply is connected between points \(A\) and \(B\) (figure). What will be the potential difference \(V\) across the capacitor?
| 1. | \(220~\text{V}\) | 2. | \(110~\text{V}\) |
| 3. | \(0~\text{V}\) | 4. | \(220\sqrt{2}~\text{V}\) |
Subtopic: Â PN junction |
Level 3: 35%-60%
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The output of the given circuit in figure given below,
| 1. | would be zero at all times. |
| 2. | would be like a half wave rectifier with positive cycles in output. |
| 3. | would be like a half wave rectifier with negative cycles in output. |
| 4. | would be like that of a full wave rectifier. |
Subtopic: Â PN junction |
Level 3: 35%-60%
Hints
In the circuit shown in the figure given below, if the diode forward voltage drop is \(0.3~\text V,\) the voltage difference between \(A\) and \(B\) is:
| 1. | \(1.3~\text V\) | 2. | \(2.3~\text V\) |
| 3. | \(0\) | 4. | \(0.5~\text V\) |
Subtopic: Â PN junction |
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Level 2: 60%+
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When an electric field is applied across a semiconductor:
| (a) | electrons move from lower energy level to higher energy level in the conduction band. |
| (b) | electrons move from higher energy level to lower energy level in the conduction band. |
| (c) | holes in the valence band move from higher energy level to lower energy level. |
| (d) | holes in the valence band move from lower energy level to higher energy level. |
Choose the correct option:
1. (a), (c)
2. (a), (d)
3. (b), (d)
4. (c), (d)
Subtopic: Â PN junction |
 58%
Level 3: 35%-60%
Hints
In the depletion region of a diode:
| (a) | there are no mobile charges |
| (b) | equal number of holes and electrons exist, making the region neutral |
| (c) | recombination of holes and electrons has taken place |
| (d) | immobile charged ions exist |
1. (a), (b)
2. (a), (b), (d)
3. (c), (d)
4. All options are correct
Subtopic: Â PN junction |
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Level 2: 60%+
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The breakdown in a reverse-biased \(\mathrm{p\text-n}\) junction is more likely to occur due to:
| (a) | the large velocity of the minority charge carriers if the doping concentration is small. |
| (b) | the large velocity of the minority charge carriers if the doping concentration is large. |
| (c) | strong electric field in a depletion region if the doping concentration is small. |
| (d) | strong electric field in the depletion region if the doping concentration is large. |
Choose the correct option:
1. (a), (d)
2. (b), (d)
3. (c), (d)
4. (b), (c)
Subtopic: Â PN junction |
Level 3: 35%-60%
Hints
In the circuit shown in Fig. 14.5, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is
1. 1.3 V
2. 2.3 V
3. 0
4. 0.5 V
1. 1.3 V
2. 2.3 V
3. 0
4. 0.5 V
Subtopic: Â PN junction |
 89%
Level 1: 80%+
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