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Q. No.In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
1.
only \(D_3\)
2.
\(D_1\) and \(D_3\)
3.
all of the diodes
4.
none of the diodes
Subtopic: PN junction |
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Which circuit element would make the best series filter to prevent high–frequency signals from passing through a bass speaker?
1. a capacitor
2. an inductor
3. a resistor
4. a transformer
1. a capacitor
2. an inductor
3. a resistor
4. a transformer
Subtopic: Rectifier |
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Specify which of the following type of material might satisfy these descriptions:
A half-filled valence band, an empty conduction band, and an energy gap of \(1\) eV.
A half-filled valence band, an empty conduction band, and an energy gap of \(1\) eV.
| 1. | conductor |
| 2. | insulator |
| 3. | semiconductor |
| 4. | none of the above |
Subtopic: Energy Band theory |
78%
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To make ordinary silicon into a p-type semiconductor, you might add to it:
1. Indium
2. Antimony
3. Germanium
4. Carbon
1. Indium
2. Antimony
3. Germanium
4. Carbon
Subtopic: Types of Semiconductors |
82%
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In a forward-biased \(\mathrm{p\text{-n}}\) junction diode, the potential barrier in the depletion region is of the form of:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: PN junction |
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The electrical circuit used to get smooth dc output from a rectifier circuit is called:
1. logic gate
2. amplifier
3. filter
4. oscillator
1. logic gate
2. amplifier
3. filter
4. oscillator
Subtopic: Rectifier |
62%
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A full wave rectifier circuit along with the input and output voltages is shown in the figure. The contribution to the output voltage from diode-2 is:
1. A, C
2. B, D
3. B, C
4. A, D
1. A, C
2. B, D
3. B, C
4. A, D
Subtopic: Rectifier |
81%
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What causes the depletion layer across the p-n junction?
| 1. | drift of holes |
| 2. | drift of electrons |
| 3. | diffusion of holes and electrons |
| 4. | diffusion of neither holes nor electrons |
Subtopic: PN junction |
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The charge on a \(\mathrm{p}\)-type semiconductor is:
| 1. | neutral |
| 2. | negative |
| 3. | positive |
| 4. | may be positive or negative |
Subtopic: Types of Semiconductors |
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The energy band gap of semiconducting material to produce violet (wavelength \(=4000~\mathring{\text{A}}\)) LED is (nearly):
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
Subtopic: Energy Band theory |
86%
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