The following table 
 
is a truth table for
1. NAND gate
2. NOR gate
3. XOR gate
4. AND gate

Subtopic:  Logic gates |
 67%
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In an \(\mathrm{n\text-}\)type semiconductor, which of the following statement is true?
1. Electrons are minority carriers and pentavalent atoms are dopants.
2. Holes are minority carriers and pentavalent atoms are dopants.
3. Holes are the majority carriers and trivalent atoms are dopants.
4. Electrons are the majority carriers and trivalent atoms are dopants.
Subtopic:  Types of Semiconductors |
 81%
From NCERT
AIPMT - 2013
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The output \((X)\) of the logic circuit shown in the figure will be: 
  
1. \(X= \overline{A\cdot B}\)
2. \(X = A\cdot B\)
3. \(X= \overline{A+ B}\)
4. None of the above

Subtopic:  Logic gates |
 79%
From NCERT
AIPMT - 2013
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Transfer characteristics [output voltage (Vo) vs input voltage (Vi)] for a base biased transistor in CE configurations are as shown in the figure. For using the transistor as a switch, it is used:

1. In region III

2. Both in the region (I) and (III)

3. In region II

4. In region I

 78%
From NCERT
AIPMT - 2012
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In a forward biasing of the p-n junction:
 
1. the positive terminal of the battery is connected to the p-side and the depletion region becomes thick.
2. the negative terminal of the battery is connected to the n-side and the depletion region becomes thin.
3. the positive terminal of the battery is connected to the n-side and the depletion region becomes thin.
4. the negative terminal of the battery is connected to the p-side and the depletion region becomes thick.

Subtopic:  PN junction |
 76%
From NCERT
AIPMT - 2011
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To get an output Y = 1 from the circuit shown below, the input must be:

 

1. A=0 B=1 C=0

2. A=0 B=0 C=1

3. A=1 B=0 C=1

4. A=1 B=0 C=0

Subtopic:  Logic gates |
 91%
From NCERT
AIPMT - 2010
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A transistor is operated in a common-emitter configuration at Vc = 2 volt such that a change in the base current from 100 μA to 200 μA produces a change in the collector current from 5 mA to 10 mA. The current gain is:
1. 75
2. 100
3. 150
4. 50
 79%
From NCERT
AIPMT - 2009
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A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:

1. 10×1014 Hz

2. 5×1014 Hz

3. 1×1014 Hz

4. 20×1014 Hz

Subtopic:  Energy Band theory | Applications of PN junction |
 82%
From NCERT
AIPMT - 2008
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