Which of the following energy band diagram shows the N-type semiconductor

 

1. 

2. 

3. 

4. 

Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor

1. 

2. 

3. 

4. 

The diagrams below show energy band structures for three silicon semiconductor samples labelled \(X,Y,\) and \(Z.\)
                           
Based on these energy band diagrams, which statement correctly identifies the doping type for each sample?

In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)

The temperature (T) dependence of resistivity ($\rho$) of a semiconductor is represented by

1. 

2. 

3. 

4. 

In a forward biased P-N junction diode, the potential barrier in the depletion region is of the form

1. 

2. 

3. 

4. 

Different voltages are applied across a P-N junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

1. 

2. 

3. 

4. 

If the following input signal is sent through a PN-junction diode, then the output signal across ${\mathrm{R}}_{\mathrm{L}}$ will be

1. 

2. 

3. 

4. 

The curve between charge density and distance near P-N junction will be

1. 

2. 

3. 

4. 

The resistance of a germanium junction diode whose is shown in figure is $\left({\mathrm{V}}_{\mathrm{k}}=0.3\mathrm{V}\right)$

(1) 5 k$\mathrm{\Omega }$

(2) 0.2 k$\mathrm{\Omega }$

(3) 2.3 k$\mathrm{\Omega }$

(4) $\left(\frac{10}{2.3}\right)\mathrm{k\Omega }$