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Q. No.The voltage drop across a silicon diode \((D)\) which is in forward bias and conducting a small current is approximately \(0.7\) V. Which of the following sources will deliver a voltage of \(3\) V?
1.
2.
3.
4.
Subtopic: PN junction |
60%
Level 2: 60%+
Hints
The output of the above circuit is:
| 1. | (\(A\) AND \(B\)) | 2. | (\(A\) OR \(B\)) |
| 3. | (\(B\) OR \(C\)) | 4. | none of the above |
Subtopic: Logic gates |
55%
Level 3: 35%-60%
Hints
If the temperature of a diode rises, the current through the diode (keeping voltage constant):
| 1. | increases. |
| 2. | decreases. |
| 3. | remains constant. |
| 4. | may increase or decrease depending on bias. |
Subtopic: PN junction |
65%
Level 2: 60%+
Hints
When a \(\mathrm{p\text-}\)type semi-conductor is put in an electric field \(\vec{E}\) the electrons in the valence band, on average:
| 1. | flow in the direction of the \(\vec{E}\) and cause a current opposite to \(\vec{E}\) |
| 2. | flow opposite to \(\vec{E}\) and cause a current along \(\vec{E}\) |
| 3. | flow along \(\vec{E}\) and cause a current along \(\vec{E}\) |
| 4. | flow opposite to \(\vec{E}\) and cause a current opposite to \(\vec{E}\) |
Subtopic: Types of Semiconductors |
64%
Level 2: 60%+
Hints
The dynamic resistance of a diode is given by; \(R=\dfrac{26}{i(\text{mA})}~\Omega,\) where \(i\) is the diode current.
| Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
| Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
| 1. | Statement I is incorrect and Statement II is correct. |
| 2. | Both Statement I and Statement II are correct. |
| 3. | Both Statement I and Statement II are incorrect. |
| 4. | Statement I is correct and Statement II is incorrect. |
Subtopic: PN junction |
73%
Level 2: 60%+
Hints
The output of the circuit given in the diagram is:
| 1. | \(A\) AND \(B\) | 2. | \(A\) OR \(B\) |
| 3. | \(A\) | 4. | \(B\) |
Subtopic: Logic gates |
58%
Level 3: 35%-60%
Hints
Match the items in List-I with their corresponding descriptions in List-II:
Codes:
| List-I | List-II | ||
| (a) | Intrinsic semiconductor | (e) | Prepared by adding phosphorus |
| (b) | \(\mathrm{n}\text-\)type semiconductor | (f) | The width is nearly one micron |
| (c) | \(\mathrm{p}\text-\)type semiconductor | (g) | Silicon |
| (d) | Depletion layer | (h) | Prepared by adding indium |
Codes:
| 1. | (a)-(g), (b)-(e), (c)-(h), (d)-(f) |
| 2. | (a)-(h), (b)-(f), (c)-(e), (d)-(g) |
| 3. | (a)-(e), (b)-(g), (c)-(f), (d)-(h) |
| 4. | (a)-(f), (b)-(h), (c)-(g), (d)-(e) |
Subtopic: Types of Semiconductors |
92%
Level 1: 80%+
Hints
The output \((Y)\) of the logic circuit given above is:
1. \(A\) AND \(C\)
2. \(A\) OR \(C\)
3. always TRUE
4. always FALSE
1. \(A\) AND \(C\)
2. \(A\) OR \(C\)
3. always TRUE
4. always FALSE
Subtopic: Logic gates |
59%
Level 3: 35%-60%
Hints
In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
| 1. | only \(D_3\) | 2. | \(D_1\) and \(D_3\) |
| 3. | all of the diodes | 4. | none of the diodes |
Subtopic: PN junction |
53%
Level 3: 35%-60%
Hints
Consider the circuit shown in the above diagram. The output \((Y)\) of the circuit does not depend on \(A.\) Then, \(Y=\)
1. \(B\) AND \(C\)
2. \(B\) OR \(C\)
3. \(B\)
4. \(C\)
1. \(B\) AND \(C\)
2. \(B\) OR \(C\)
3. \(B\)
4. \(C\)
Subtopic: Logic gates |
67%
Level 2: 60%+
Hints
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