A silicon wafer of \(\mathrm{n}\)-type material with a cross-sectional area of \(3.14\times 10^{-6} \) m2, a conductivity of \(5.8\times 10^{7} \) siemens per metre, and an electron mobility of \(0.0032\) m2V–1s–1 is subjected to an electric field of \(20\) milli-V/m. (neglect hole concentration)
Match the items in Column-I with those in Column-II:
|
Column-I |
|
Column-II |
| (A) |
The electron concentration in the wafer is |
(P) |
\(1.16\times 10^6\) SI units |
| (B) |
The current density in the wafer is |
(Q) |
\(3.64\) SI units |
| (C) |
The current flowing through the wafer is |
(R) |
\(6.4\times 10^{-5}\) SI units |
| (D) |
The drift velocity of electrons is |
(S) |
\(1.13\times 10^{29}\) SI units |
| 1. |
A(P), B(Q), C(R), D(S) |
| 2. |
A(P), B(S), C(R), D(Q) |
| 3. |
A(S), B(P), C(Q), D(R) |
| 4. |
A(Q), B(P), C(R), D(S) |
Q. No.
