The circuit diagram shown here corresponds to the logic gate:

     
1. \(\text{NOR}\)
2. \(\text{AND}\)
3. \(\text{OR}\)
4. \(\text{NAND}\)

An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}.\) The energy gap is \(1.9~\text{eV}.\) The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26}~ \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

The correct Boolean operation represented by the circuit diagram given above is:
 
1. \(\mathrm{NOR}\)
2. \(\mathrm{AND}\)
3. \(\mathrm{OR}\)
4. \(\mathrm{NAND}\)

For a \(\mathrm{p}\text{-}\)type semiconductor, which of the following statements is true?

The following figure shows a logic gate circuit with two inputs A and B and the output C. The voltage waveforms of A, B, and C are as shown below:
   
The logic circuit gate is:

1. AND gate

2. NAND gate

3. NOR gate

4. OR gate

Which of the following is an example of forward biasing?
 

1.		2.
3.		4.

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 

1. p-type semiconductor

2. insulator

3. metal

4. n-type semiconductor

In the following circuit, the output \(Y\) for all possible inputs \(A\) and \(B\) is expressed by the truth table: 
    

The circuit is equivalent to: 
     

1. AND gate
2. NAND gate
3. NOR gate
4. OR gate

A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:

1. $10\times {10}^{14}$ $\mathrm{Hz}$

2. $5\times {10}^{14}$ $\mathrm{Hz}$

3. $1\times {10}^{14}$ $\mathrm{Hz}$

4. $20\times {10}^{14}$ $\mathrm{Hz}$