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Pure Si at 500 K has equal number of electron $\left({n}_{\mathit{e}}\right)$ and hole $\left({n}_{\mathit{h}}\right)$ concentrations of $1.5×{10}^{16}{\mathrm{m}}^{-3}.$ Doping by indium increases ${n}_{\mathit{h}}$ to  The doped semiconductor is of

(a) n-type with electron concentration

(b) p-type with electron concentration

(c) n-type with electron concentration

(d) p-type with electron concentration

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