filter
  • Subject:

    ...

  • Topic:

    ...

 

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016m-3. Doping by indium increases nh to 4.5×1022 m-3. The doped semiconductor is of 

(a) n-type with electron concentration ne=5×1022 m-3

(b) p-type with electron concentration ne=2.5×1023 m-3

(c) n-type with electron concentration ne=2.5×1010 m-3

(d) p-type with electron concentration ne=5×109 m-3

NEET