Transfer characteristic [output voltage V0 vs input voltage Vi] for a base biased transistor in CE configuration is as shown in the figure.For using transistor as a switch, it is used 

(a) in region III

(b) both in region (I) and (III)

(c) in region II

(d) in region I

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The figure shows a logic circuit with two inputs A and B and the output C.The voltage wave forms across A, B and C are as given.The logic circuit gate is 

1. OR gate                                          2. NOR gate

3. AND gate                                        4. NAND gate

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The input resistance of a silicon transistor is

100 Ω. Base current is changed by 40 μA

which results in a change in collector current

by 2 mA. This transistor is used as a common-

emitter amplifier with a load resistance of 4 kΩ.

The voltage gain of the amplifier is

1. 2000

2. 3000

3. 4000

4. 1000

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To get an output Y=1 in given circuit, which

of the following input will be correct ?

      A     B      C                   A     B     C

1.  1     0       0             2.  1     0     1

3. 1      1       0             4.  0     1     0

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Symbolic representation of four logic gates

are shown as

(i) 

(ii) 

(iii) 

(iv) 

Pick out which ones are for AND, NAND and 

NOT gates, respectively.

(a) (iii), (ii)and (i)

(b) (iii), (ii) and (iv)

(c) (ii), (iv) and (iii)

(d) (ii), (iii) and (iv)

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If a small amount of antimony is added to germanium crystal

(a) the antimony becomes an acceptor atom

(b) there will be more free electrons than holes in the semiconductor

(c) its resistance is increased

(d) it becomes a p-type semiconductor

Concept Questions :-

Types of semiconductors
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In forward biasing of the p-n junction 

(a) the positive terminal of the battery is connected to n-side and the depletion region becomes thin

(b) the positive terminal of the battery is connected to n-side and the depletion region becomes thick

(c) the positive terminal of the battery is connected to p-side and the depletion region becomes thin

(d) the positive terminal of the battery is connected to p-side and the depletion region becomes thick

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A transistor is operated in common emitter configuration at VC=2 V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is 

1. 75                                               2. 100

3. 25                                                4. 50

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In the following figure, the diodes which are forward biased, are

                                                                    

                                                                  

(1) C and D only

(2) A and C only

(3) B only

(4) Band D only

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Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016m-3. Doping by indium increases nh to 4.5×1022 m-3. The doped semiconductor is of 

(a) n-type with electron concentration ne=5×1022 m-3

(b) p-type with electron concentration ne=2.5×1023 m-3

(c) n-type with electron concentration ne=2.5×1010 m-3

(d) p-type with electron concentration ne=5×109 m-3

Concept Questions :-

Types of semiconductors
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