The barrier potential of a p-n junction depends on
(i)type of semiconductor material
(ii)amount of doping
Which one of the following is correct
(a)(i) and (ii)only
(c)(ii) and (iii)only
(d)(i),(ii) and (iii)
Barrier potential should depend on all the three options given. Barrier potential depends on the material used to make p-n junction diode (whether it is Sl or Ge). It should also depends on amount of doping due to which the number of majority carriers will change. It should also depend on temperature due to number of minority carriers will change.