Q. No.
An n-p-n transistor is connected in a common emitter configuration (see figure) in which collector voltage drop across load resistance ( 800 ) connected to the collector circuit is 0.8 V. The collector current is:
1. 2 mA
2. 0.1 mA
3. 1 mA
4. 0.2 mA
Which of the following gate is called the universal gate?
1. \(\mathrm{OR}\) gate
2. \(\mathrm{AND}\) gate
3. \(\mathrm{NAND}\) gate
4. \(\mathrm{NOT}\) gate
An intrinsic semiconductor is converted into an \(\mathrm{n\text{-}}\)type extrinsic semiconductor by doping it with:
1. phosphorous
2. aluminium
3. silver
4. germanium
| (a) | the large velocity of the minority charge carriers if the doping concentration is small. |
| (b) | the large velocity of the minority charge carriers if the doping concentration is large. |
| (c) | strong electric field in a depletion region if the doping concentration is small. |
| (d) | strong electric field in the depletion region if the doping concentration is large. |
Choose the correct option:
1. (a), (d)
2. (b), (d)
3. (c), (d)
4. (b), (c)
| (a) | \(R_L\) should be increased |
| (b) | input frequency should be decreased |
| (c) | input frequency should be increased |
| (d) | capacitors with high capacitance should be used |
Choose the correct option:
| 1. | (a), (c) | 2. | (b), (d) |
| 3. | (a), (c), (d) | 4. | (b), (c), (d) |
What happens during the regulation action of a Zener diode?
| a. | the current and voltage across the Zener remain fixed. |
| b. | the current through the series Resistance \((R_s)\) changes. |
| c. | the Zener resistance is constant. |
| d. | the resistance offered by the Zener changes. |
Choose the correct option:
| 1. | (a, b) | 2. | (b, d) |
| 3. | (b, c) | 4. | (c, d) |
In the depletion region of a diode:
| (a) | there are no mobile charges |
| (b) | equal number of holes and electrons exist, making the region neutral |
| (c) | recombination of holes and electrons has taken place |
| (d) | immobile charged ions exist |
1. (a), (b)
2. (a), (b), (d)
3. (c), (d)
4. All options are correct
Consider an n-p-n transistor with its base-emitter junction forward biased and collector-base junction reverse biased. Which of the following statements are true?
| a. | Electrons crossover from emitter to collector |
| b. | Holes move from base to collector |
| c. | Electrons move from emitter to base |
| d. | Electrons from the emitter move out of the base without going to the collector. |
1. (a, d)
2. (a, c)
3. (b, c)
4. (c, d)
| (a) | electrons move from lower energy level to higher energy level in the conduction band. |
| (b) | electrons move from higher energy level to lower energy level in the conduction band. |
| (c) | holes in the valence band move from higher energy level to lower energy level. |
| (d) | holes in the valence band move from lower energy level to higher energy level. |
Choose the correct option:
1. (a), (c)
2. (a), (d)
3. (b), (d)
4. (c), (d)
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