Following diagram performs the logic function of
(1) AND gate
(2) NAND gate
(3) OR gate
(4) XOR gate
Application of forward bias to a p-n junction
(1) widens the depletion zone
(2) increases the number of donors on the n-side
(3) increases the potential difference across the depletion zone
(4) increases the electric field in the depletion zone
In a p-n junction photocell, the value of the photo electromotive force produced by monochromatic light is proportional to
(1) the intensity of the light falling on the cell
(2) the frequency of the light falling on the cell
(3) the voltage applied at the p-n junction
(4) the barrier voltage at the p-n junction
A transistor is operated in common emitter configuration at constant voltage such that a change in the base current from 100 to 150 produces a change in the collector current from 5 to 10 mA. The current gain () is
(1) 67
(2) 75
(3) 100
(4) 50
A p-n photodiode is made of a material with a band gap energy of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
(1)
(2)
(3)
(4)
For which logic gate, the given truth table is shown?
A B Y
1 1 0
0 1 1
1 0 1
0 0 1
(1) NAND
(2) XOR
(3) NOR
(4) OR
For a transistor , then, the current gain for common emitter configuration
(1) 12
(2) 6
(3) 48
(4) 24
If the internal resistance of the cell is negligible, then current flowing through the circuit is
(1)
(2)
(3)
(4)
In which of the following figures junction diode is forward biased?
(1)
(2)
(3)
(4)