For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?

| 1. | In F.B. the voltage across \(R\) is \(V.\) |
| 2. | In R.B. the voltage across \(R\) is \(V.\) |
| 3. | In F.B. the voltage across \(R\) is \(2V.\) |
| 4. | In R.B. the voltage across \(R\) is \(2V.\) |
Reverse bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
| 1. | diode design | 2. | temperature |
| 3. | forward bias | 4. | doping density |
Following diagram performs the logic function of:

1. AND gate
2. NAND gate
3. OR gate
4. XOR gate
In a p–n junction photocell, the value of the photo electromotive force produced by monochromatic light is proportional to:
| 1. | the intensity of the light falling on the cell. |
| 2. | the frequency of the light falling on the cell. |
| 3. | the voltage applied at the p–n junction. |
| 4. | the barrier voltage at the p–n junction. |
In semiconductors at room temperature:
| 1. | The valence band is completely filled and the conduction band is partially filled. |
| 2. | The valence band is completely filled. |
| 3. | The conduction band is completely empty. |
| 4. | The valence band is partially empty and the conduction band is partially filled. |
The truth table for the following network is:
| 1. |
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| 2. |
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| 3. |
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| 4. | None of the above |
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
| 1. | ![]() |
2. | ![]() |
| 3. | ![]() |
4. | ![]() |
| 1. | widens the depletion zone. |
| 2. | increases the number of donors on the n side. |
| 3. | increases the potential difference across the depletion zone. |
| 4. | increases the electric field in the depletion zone. |
| 1. | The resistivity of a semiconductor increases with an increase in temperature. |
| 2. | Substances with an energy gap of the order of \(10~\text{eV}\) are insulators. |
| 3. | In conductors, the valence and conduction bands may overlap. |
| 4. | The conductivity of a semiconductor increases with an increase in temperature. |