A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is m wide, the intensity of the electric field in this region is:
1. | \(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) | 2. | \(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) |
3. | \(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\) | 4. | \(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\) |
The current through an ideal p-n junction diode shown in the circuit will be:
1. 5 A
2. 0.2 A
3. 0.6 A
4. Zero
In a p-n junction diode not connected to any circuit:
1. | the potential is the same everywhere. |
2. | the P-type is at higher potential than the N-type side. |
3. | there is an electric field at the junction directed from the N- type side to the P- type side. |
4. | there is an electric field at the junction directed from the P-type side to the N-type side. |
When a forward bias is applied to a p-n junction, then what happens to the potential barrier , and the width of charge depleted region x?
1. | \(V_B\) increases, x decreases | 2. | \(V_B\) decreases, x increases |
3. | \(V_B\) increases, x increases | 4. | \(V_B\) decreases, x decreases |
Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?
1. | 2. | ||
3. | 4. |
For a diode connected in parallel with a resistor, Choose the correct graph between \((I)\) and \((V)\) for the given circuit:
1. | 2. | ||
3. | 4. |
The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:
1. | sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively. |
2. | sample X is undoped while both samples Y and Z have been doped with a fifth group impurity. |
3. | sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped. |
4. | sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively. |
The net charges on -type semiconductor and -type semiconductor are, respectively:
1. Positive, negative
2. Negative, positive
3. Positive, positive
4. Zero, zero
In which of the following condition, diffusion current in junction is more than drift current?
1. | Forward biasing | 2. | Reverse biasing |
3. | No biasing | 4. | All of these |
What is the reading of the ideal ammeters A1 and A2 connected in the given circuit diagram, if junction diodes are ideal?
1. 2 A and zero
2. 3 A and 2 A
3. 2 A and 3 A
4. Zero and 2 A