The increase in the width of the depletion region in a \(\mathrm{p\text{-}n}\) junction diode is due to:
1. reverse bias only
2. both forward bias and reverse bias
3. increase in forwarding current
4. forward bias only

Out of the following which one is a forward-biased diode?

1.
2.
3.
4.

In a \(\mathrm{p\text{-}n}\) junction diode, the change in temperature due to heating:

Which one of the following represents the forward bias diode?

1.
2.
3.
4.

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
   
1. \(2.5~\text{A}\)
2. \(10.0~\text{A}\)
3. \(1.43~\text{A}\)
4. \(3.13~\text{A}\)

Consider the junction diode as an ideal. The value of current flowing through \(AB\) is: 
   
1. \(10^{-2}~\text{A}\)
2. \(10^{-1}~\text{A}\)
3. \(10^{-3}~\text{A}\)
4. \(0~\text{A}\)

In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\)$$ and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1.		2.
3.		4.