As the temperature increases, the electrical resistance:
1. decreases for conductors but increases for semiconductors.
2. increases for both conductors and semiconductors.
3. decreases for both conductors and semiconductors.
4. increases for conductors but decreases for semiconductors.
Subtopic:  Energy Band theory |
 75%
Level 2: 60%+
NEET - 2022
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The solids which have the negative temperature coefficient of resistance are:

1. insulators only
2. semiconductors only
3. insulators and semiconductors
4. metals
Subtopic:  Energy Band theory |
 59%
Level 3: 35%-60%
NEET - 2020
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\(\mathrm{C}\) and \(\mathrm{Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(\mathrm{C}\) is an insulator whereas \(\mathrm{Si}\) is an intrinsic semiconductor. This is because:
1. in the case of \(\mathrm{C},\) the valence band is not completely filled at absolute zero temperature.
2. in the case of \(\mathrm{C},\) the conduction band is partly filled even at absolute zero temperature.
3. the four bonding electrons in the case of \(\mathrm{C}\) lie in the second orbit, whereas in the case of \(\mathrm{Si},\) they lie in the third.
4. the four bonding electrons in the case of \(\mathrm{C}\) lie in the third orbit, whereas for \(\mathrm{Si},\) they lie in the fourth orbit.
Subtopic:  Energy Band theory |
 72%
Level 2: 60%+
NEET - 2012
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A \(\mathrm{p} \text-\)type extrinsic semiconductor is obtained when Germanium is doped with:
1. antimony
2. phosphorous
3. arsenic
4. boron
Subtopic:  Types of Semiconductors |
 76%
Level 2: 60%+
NEET - 2023
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In the given circuits \((a),\) \((b),\) and \((c),\) the potential drop across the two \({\mathrm{p\text-n}}\) junctions is equal in:

            
1. both circuits \((a)\) and \((c)\)
2. circuit \((a)\) only
3. circuit \((b)\) only
4. circuit \((c)\) only
Subtopic:  PN junction |
 65%
Level 2: 60%+
NEET - 2022
Hints

Which one of the following represents the forward bias diode?

1.  
2.  
3.
4.
Subtopic:  PN junction |
 84%
Level 1: 80%+
NEET - 2017
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:

1. \(2.5~\text{A}\) 2. \(10.0~\text{A}\)
3. \(1.43~\text{A}\) 4. \(3.13~\text{A}\)
Subtopic:  PN junction | Applications of PN junction |
 87%
Level 1: 80%+
NEET - 2016
Hints

In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

Subtopic:  PN junction |
 75%
Level 2: 60%+
NEET - 2015
Hints

If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1. 2.
3. 4.
Subtopic:  PN junction |
 72%
Level 2: 60%+
NEET - 2015
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The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) type of semiconductor material 
(b) amount of doping 
(c) temperature 

Which one of the following is correct?

1. (a) and (b) only 2. (b) only
3. (b) and (c) only 4. (a), (b) and (c)
Subtopic:  PN junction |
 84%
Level 1: 80%+
NEET - 2014
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