In a semiconductor;

(A) there are no free electrons at \(0^\circ\text{K}.\)
(B) there are no free electrons at any temperature.
(C) the number of free electrons increases with temperature.
(D) the number of free electrons is less than that in a conductor.

Choose the correct option from the given ones:
1. (A) and (B) only 
2. (B) and (C) only
3. (A), (C), and (D) only
4. (A), (B), and (D) only

Subtopic:  Energy Band theory |
 86%
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When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor:
1. increases
2. decreases
3. remains the same
4. becomes zero

Subtopic:  Types of Semiconductors |
 84%
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A \(\mathrm{p}\text-\)type of semiconductor is:
1. positively charged
2. negatively charged
3. uncharged
4. uncharged at \(0~\text{K}\) but charged at higher temperatures

Subtopic:  Types of Semiconductors |
 60%
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Let \(n_{p}\) and \(n_{e}\) be the number of holes and conduction electrons in an intrinsic semiconductor. Then:
1. \(n_{p}> n_{e}\)
2. \(n_{p}= n_{e}\)
3. \(n_{p}< n_{e}\)
4. \(n_{p}\neq n_{e}\)

Subtopic:  Types of Semiconductors |
 84%
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The peak voltage in the output of a half-wave rectifier is \(30 ~\text{V}.\) The RMS voltage of the output wave is: (assuming no distortion in wave) 
1. \(\dfrac{30}{\sqrt2}~\text{V}\) 2. \(15 ~\text{V}\)
3. \(\dfrac{15}{\sqrt2}~\text{V}\) 4. \(10 ~\text{V}\)
Subtopic:  Rectifier |
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Assume that the threshold voltage of a diode is \(0.7\) V, and the forward resistance is negligible. 

The current through the circuit is:
1. \(40\) mA 
2. \(54\) mA
3. \(33\) mA 
4. \(26\) mA
Subtopic:  PN junction |
 56%
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The band gap between the valence band and the conduction band in a certain material is \(3~\text{eV}.\) What is the longest wavelength of light that can create an electron-hole pair in the material, with the electron in the conduction band and the hole in the valence band?
(take \(hc=1240~\text{eV-nm}\) )
1. \(414~\text{nm}\)
2. \(300~\text{nm}\)
3. \(830~\text{nm}\)
4. \(207~\text{nm}\)
Subtopic:  Energy Band theory |
 88%
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A \(\mathrm{p\text-n}\) junction has an electric field of \(6\times 10^{5}~\text{V/m}\) in the junction and the junction width is \(500~\text{nm}.\) The height of the potential barrier is:
1. \(0.6~\text V\) 
2. \(0.3~\text V\) 
3. \(0.5~\text V\) 
4. \(0.25~\text V\) 
Subtopic:  PN junction |
 89%
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:

This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:

Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i,\) when the diode is forward-biased?
(\(V_{AB}\) in volt, \(i\) in ampere)
 
1. \(V_{A B}=i\cdot5+0.6\)
2. \(V_{A B}=i\cdot5-0.6\)
3. \(V_{A B}=i\cdot5+(0.6-5)\)
4. \(V_{A B}=i\cdot5+\left(0.6+5\right)\)
Subtopic:  PN junction |
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The voltage \(V_{AB}=20~\text{V}\) at its peak value, and is sinusoidal in time. The current \(i\) (in amperes), when plotted as a function of time, is given by:
(consider the diodes as ideal.)
    
1. 2.
3. 4.
 
Subtopic:  PN junction |
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