If the reverse bias in a junction diode is changed from $$5$$ V to $$15$$ V then the value of current changes from $$38~\mu \text{A}$$ to $$88~\mu \text{A}$$. The resistance of junction diode will be:
1. $$4\times10^{5}$$
2. $$3\times10^{5}$$
3. $$2\times10^{5}$$
4. $$10^{6}$$

Subtopic: Â PN junction |
Â 84%
From NCERT
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $$R_1$$ will be:

 1 $$2.5$$ A 2 $$10.0$$ A 3 $$1.43$$ A 4 $$3.13$$ A
Subtopic: Â PN junction |
Â 86%
From NCERT
NEET - 2016
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What is the reading of the ideal ammeters $$A_1$$ and $$A_2$$ connected in the given circuit diagram, if $$\mathrm{p\text-n}$$ junction diodes are ideal?

1. $$2$$ A and zero
2. $$3$$ A and $$2$$ A
3. $$2$$ A and $$3$$ A
4. zero and $$2$$ A

Subtopic: Â PN junction |
Â 83%
From NCERT
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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?

 1 2 3 4

Subtopic: Â PN junction |
Â 83%
From NCERT
AIPMT - 2004
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A potential barrier of $$0.50$$ V exists across a $$\mathrm{p\text-n}$$ junction. If the depletion region is $$5.0\times10^{-7}~\text{m}$$ wide, the intensity of the electric field in this region is:
 1 $$1.0 \times 10^6 ~\text{V/m}$$ 2 $$1.0 \times 10^5 ~\text{V/m}$$ 3 $$2.0 \times 10^5 ~\text{V/m}$$ 4 $$2.0 \times 10^6 ~\text{V/m}$$
Subtopic: Â PN junction |
Â 82%
From NCERT
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For the given circuit of the $$\mathrm{p\text-n}$$ junction diode, which of the following statements is correct?

 1 In F.B. the voltage across $$R$$ is $$V$$. 2 In R.B. the voltage across $$R$$ is $$V$$. 3 In F.B. the voltage across $$R$$ is $$2V$$. 4 In R.B. the voltage across $$R$$ is $$2V$$.

Subtopic: Â PN junction |
Â 79%
From NCERT
AIPMT - 2002
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Reverse-bias applied to a junction diode:

 1 lowers the potential barrier 2 raises the potential barrier 3 increases the majority carrier current 4 increases the minority carrier's current

Subtopic: Â PN junction |
Â 74%
From NCERT
AIPMT - 2003
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The depletion layer in the $$\mathrm{p\text-n}$$ junction region is caused by:
 1 the drift of holes. 2 diffusion of charge carriers. 3 migration of impurity ions. 4 drift of electrons.
Subtopic: Â PN junction |
Â 76%
From NCERT
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The barrier potential of a $$\mathrm{p\text-n}$$ junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density

Subtopic: Â PN junction |
Â 73%
From NCERT
AIPMT - 2003
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When a forward bias is applied to a $$\mathrm{p\text-n}$$ junction, then what happens to the potential barrier $$V_B,$$ and the width of charge depleted region $$x$$?
 1 $$V_B$$ increases, $$x$$ decreases 2 $$V_B$$ decreases, $$x$$ increases 3 $$V_B$$  increases, $$x$$ increases 4 $$V_B$$ decreases, $$x$$ decreases
Subtopic: Â PN junction |
Â 69%
From NCERT
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