If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38~\mu \text{A}\) to \(88~\mu \text{A}\). The resistance of junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

Subtopic:  PN junction |
 84%
From NCERT
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The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
     

1. \(2.5\) A 2. \(10.0\) A
3. \(1.43\) A 4. \(3.13\) A
Subtopic:  PN junction |
 86%
From NCERT
NEET - 2016
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What is the reading of the ideal ammeters \(A_1\) and \(A_2\) connected in the given circuit diagram, if \(\mathrm{p\text-n}\) junction diodes are ideal?

   

1. \(2\) A and zero
2. \(3\) A and \(2\) A
3. \(2\) A and \(3\) A
4. zero and \(2\) A

Subtopic:  PN junction |
 83%
From NCERT
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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
 

1. 2.
3. 4.

Subtopic:  PN junction |
 83%
From NCERT
AIPMT - 2004
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A potential barrier of \(0.50\) V exists across a \(\mathrm{p\text-n}\) junction. If the depletion region is \(5.0\times10^{-7}~\text{m}\) wide, the intensity of the electric field in this region is:
1. \(1.0 \times 10^6 ~\text{V/m}\) 2. \(1.0 \times 10^5 ~\text{V/m}\)
3. \(2.0 \times 10^5 ~\text{V/m}\) 4. \(2.0 \times 10^6 ~\text{V/m}\)
Subtopic:  PN junction |
 82%
From NCERT
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For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?

        

1. In F.B. the voltage across \(R\) is \(V\).
2. In R.B. the voltage across \(R\) is \(V\).
3. In F.B. the voltage across \(R\) is \(2V\).
4. In R.B. the voltage across \(R\) is \(2V\).

Subtopic:  PN junction |
 79%
From NCERT
AIPMT - 2002
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Reverse-bias applied to a junction diode:

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier's current

Subtopic:  PN junction |
 74%
From NCERT
AIPMT - 2003
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The depletion layer in the \(\mathrm{p\text-n}\) junction region is caused by:
1. the drift of holes.
2. diffusion of charge carriers.
3. migration of impurity ions.
4. drift of electrons.
Subtopic:  PN junction |
 76%
From NCERT
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The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density

Subtopic:  PN junction |
 73%
From NCERT
AIPMT - 2003
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When a forward bias is applied to a \(\mathrm{p\text-n}\) junction, then what happens to the potential barrier \(V_B,\) and the width of charge depleted region \(x\)?
1. \(V_B\) increases, \(x\) decreases 2. \(V_B\) decreases, \(x\) increases
3. \(V_B\)  increases, \(x\) increases 4. \(V_B\) decreases, \(x\) decreases
Subtopic:  PN junction |
 69%
From NCERT
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