If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R₁ will be:
     

What is the reading of the ideal ammeters A₁ and A₂ connected in the given circuit diagram, if $\mathrm{p}-\mathrm{n}$ junction diodes are ideal?

1. 2 A and zero

2. 3 A and 2 A

3. 2 A and 3 A

4. Zero and 2 A

Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
 

1.		2.
3.		4.

A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is:

For the given circuit of the P-N junction diode, which of the following statements is correct?

Reverse-bias applied to a junction diode:

The depletion layer in the P–N junction region is caused by:

The barrier potential of a p-n junction diode does not depend on:

1. diode design

2. temperature

3. forward bias

4. doping density

When a forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{\mathit{B}}$, and the width of charge depleted region x?