\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:

1.	in the case of \(C\), the valence band is not completely filled at absolute zero temperature.
2.	in the case of \(C\), the conduction band is partly filled even at absolute zero temperature.
3.	the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third.
4.	the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit.

The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
   

1. \(\mathrm{OR}\) gate
2. \(\mathrm{NOR}\) gate
3. \(\mathrm{AND}\) gate
4. \(\mathrm{NAND}\) gate

Zener breakdown will occur if:
1. impurity level is low.
2. impurity level is high.
3. impurity is less on the n-side.
4. impurity is less on the p-side.

In the circuit shown in the figure, the maximum output voltage V_o is:

1. 0 V

2. 5 V

3. 10 V

4. $\frac{5}{\sqrt{2}} V$

If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

The correct symbol for zener diode is:

1.		2.
3.		4.

The electrical circuit used to get smooth output from a rectifier circuit is called:

1. oscillator.

2. filter.

3. amplifier.

4. logic gates.

A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is: