Q. No.The given graph represents the \(V\text-I\) characteristics of a semiconductor device. Which of the following statements is correct?
1.
It is a \(V\text-I\) characteristic of a solar cell where the point \(A\) represents open-circuit voltage and the point \(B\) represents short-circuit current.
2.
It is for a solar cell and points \(A\) and \(B\) represents open-circuit voltage and current respectively.
3.
It is for a photodiode and points \(A\) and \(B\) represents open-circuit voltage and current respectively.
4.
It is for an LED and points \(A\) and \(B\) represents open-circuit voltage and short-circuit current respectively.
| 1. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\) |
| 2. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\) |
| 3. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\) |
| 4. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\) |
The electrical circuit used to get smooth output from a rectifier circuit is called:
1. oscillator.
2. filter.
3. amplifier.
4. logic gates.
If in a \(\mathrm{p\text-n}\) junction, a square input signal of \(10\) V is applied as shown, then the output across \(R_L\) will be:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?
1. \(\left(E_g\right)_C<\left(E_g\right)_{G e} \)
2. \(\left(E_g\right)_C>\left(E_g\right)_{S i} \)
3. \(\left(E_g\right)_C=\left(E_g\right)_{S i} \)
4. \(\left(E_g\right)_C<\left(E_g\right)_{S i}\)
A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3},\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}.\) The semiconductor is:
| 1. | \(\mathrm{n}\text-\)type | 2. | \(\mathrm{p}\text-\)type |
| 3. | intrinsic | 4. | insulator |
| 1. | in the case of \(\mathrm{C},\) the valence band is not completely filled at absolute zero temperature. |
| 2. | in the case of \(\mathrm{C},\) the conduction band is partly filled even at absolute zero temperature. |
| 3. | the four bonding electrons in the case of \(\mathrm{C}\) lie in the second orbit, whereas in the case of \(\mathrm{Si},\) they lie in the third. |
| 4. | the four bonding electrons in the case of \(\mathrm{C}\) lie in the third orbit, whereas for \(\mathrm{Si},\) they lie in the fourth orbit. |
The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
1. \(\text{OR}\) gate
2. \(\text{NOR}\) gate
3. \(\text{AND}\) gate
4. \(\text{NAND}\) gate
1. \(6000~\mathring{A}\)
2. \(4000~\text{nm}\)
3. \(6000~\text{nm}\)
4. \(4000~\mathring{A}\)
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