Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?

1.	\(\left(E_g\right)_C<\left(E_g\right)_{G e} \)	2.	\(\left(E_g\right)_C>\left(E_g\right)_{S i} \)
3.	\(\left(E_g\right)_C=\left(E_g\right)_{S i} \)	4.	\(\left(E_g\right)_C<\left(E_g\right)_{S i}\)

A semiconductor is known to have an electron concentration of $8\times {10}^{13}$ cm^-3 and a hole concentration of $5\times {10}^2$ cm^-3. The semiconductor is:

1.  n-type

2.  p-type

3.  intrinsic

4.  insulator

If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across R_L will be:
              

1.		2.
3.		4.

The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?

Pure Si at 500 K has equal number of electron $\left(n_{\mathit{e}}\right)$ and hole $\left(n_{\mathit{h}}\right)$ concentration of $1.5\times {10}^{\mathrm{16 }}{\mathrm{m}}^{-3}.$ Doping by indium increases $n_{\mathit{h}}$ to $4.5\times {10}^{22}$ ${\mathrm{m}}^{-3}.$ The doped semiconductor is of:

The electrical circuit used to get smooth output from a rectifier circuit is called:

1. oscillator.

2. filter.

3. amplifier.

4. logic gates.

The correct symbol for zener diode is:

1.		2.
3.		4.

\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:

The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
   

1. \(\mathrm{OR}\) gate
2. \(\mathrm{NOR}\) gate
3. \(\mathrm{AND}\) gate
4. \(\mathrm{NAND}\) gate