A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is:

1.	\(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)	2.	\(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)
3.	\(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)	4.	\(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)

The current through an ideal p-n junction diode shown in the circuit will be:

1.  5 A

2.  0.2 A 

3.  0.6 A

4.  Zero

When a forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{\mathit{B}}$, and the width of charge depleted region x?

An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

A Zener diode is shown in the following circuit diagram. When the source voltage fluctuates such that $V>V_z$, then:
   

1. all the current I₁, I₂ and I₃ change.

2. only I₁ and I₂ change and I₃ remains constant.

3. only I₁ and I₃ change and I₂ remains constant.

4. all the currents remain constant.

What is the reading of the ideal ammeters A₁ and A₂ connected in the given circuit diagram, if $\mathrm{p}-\mathrm{n}$ junction diodes are ideal?

1. 2 A and zero

2. 3 A and 2 A

3. 2 A and 3 A

4. Zero and 2 A

Which of the following graphs may correctly represent the variation of current (l) with potential difference (V) across a zener diode?

1.		2.
3.		4.

The combination of gates shown in the diagram is equivalent to:
              

1. OR

2. AND

3. NAND

4. NOT

A Zener diode is used to obtain a constant voltage. If applied voltage \(\text V\) changes, then:
(\(\text V\) is more than Zener voltage)
             

In the given circuit, the power developed in 2 k$\Omega$ resistor is:

1. 36 mW

2. 12 mW

3. 144 mW

4. 72 mW