A potential barrier of \(0.50~\text V\) exists across a \(\mathrm{p\text-n}\) junction. If the depletion region is \(5.0\times10^{-7}~\text{m}\) wide, the intensity of the electric field in this region is:

1.	\(1.0 \times 10^6 ~\text{V/m}\)	2.	\(1.0 \times 10^5 ~\text{V/m}\)
3.	\(2.0 \times 10^5 ~\text{V/m}\)	4.	\(2.0 \times 10^6 ~\text{V/m}\)

An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}.\) The energy gap is \(1.9~\text{eV}.\) The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26}~ \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

A Zener diode is shown in the following circuit diagram. When the source voltage fluctuates such that \(V>V_z\) then:
   

The combination of gates shown in the diagram is equivalent to:
              

1. OR
2. AND
3. NAND
4. NOT

A Zener diode is used to obtain a constant voltage. If the applied voltage \(V\) changes, then:
(\( V\) is more than Zener voltage)
               

 
1. \(36~\text{mW}\)
2. \(12~\text{mW}\)
3. \(144~\text{mW}\)
4. \(72~\text{mW}\)