In the circuit shown in the figure, the maximum output voltage $$V_0$$ is:       1. $$0$$ V 2. $$5$$ V 3. $$10$$ V 4. $$\frac{5}{\sqrt{2}}~\text{V}$$

Subtopic: Â Rectifier |
From NCERT
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If the reverse bias in a junction diode is changed from $$5$$ V to $$15$$ V then the value of current changes from $$38~\mu \text{A}$$ to $$88~\mu \text{A}$$. The resistance of junction diode will be:
1. $$4\times10^{5}$$
2. $$3\times10^{5}$$
3. $$2\times10^{5}$$
4. $$10^{6}$$

Subtopic: Â PN junction |
Â 84%
From NCERT
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Zener breakdown will occur if:
1. impurity level is low.
2. impurity level is high.
3. impurity is less on the $$\mathrm{n\text-}$$side.
4. impurity is less on the $$\mathrm{p\text-}$$side.

Subtopic: Â Applications of PN junction |
Â 75%
From NCERT
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$$\mathrm{p\text-n}$$ photodiode is fabricated from a semiconductor with a band gap of $$2.5$$ eV. It can detect a signal of wavelength:
1. $$6000~\mathring{A}$$
2. $$4000$$ nm
3. $$6000$$ nm
4. $$4000~\mathring{A}$$
Subtopic: Â Energy Band theory |
Â 63%
From NCERT
AIPMT - 2009
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The figure shows a logic circuit with two inputs $$A$$ and $$B$$ and the output $$C$$. The voltage waveforms across $$A$$, $$B$$, and $$C$$ are as given. The logic circuit gate is:

1. $$\text{OR}$$ gate
2. $$\text{NOR}$$ gate
3. $$\text{AND}$$ gate
4. $$\text{NAND}$$ gate

Subtopic: Â Logic gates |
Â 83%
From NCERT
AIPMT - 2012
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$${C}$$ and $${Si}$$ both have the same lattice structure, having $$4$$ bonding electrons in each. However, $$C$$ is an insulator whereas $$Si$$ is an intrinsic semiconductor. This is because:
 1 in the case of $$C$$, the valence band is not completely filled at absolute zero temperature. 2 in the case of $$C$$, the conduction band is partly filled even at absolute zero temperature. 3 the four bonding electrons in the case of $$C$$ lie in the second orbit, whereas in the case of $$Si$$, they lie in the third. 4 the four bonding electrons in the case of $$C$$ lie in the third orbit, whereas for $$Si$$, they lie in the fourth orbit.
Subtopic: Â Energy Band theory |
Â 71%
From NCERT
NEET - 2012
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An LED is constructed from a $$\mathrm{p\text{-}n}$$ junction diode using $$\mathrm{GaAsP}$$. The energy gap is $$1.9~\text{eV}$$. The wavelength of the light emitted will be equal to:
1. $$10.4 \times 10^{-26} \text{m}$$
2. $$654~ \text{nm}$$
3. $$654~ \text{m}$$
4. $$654\times 10^{-11}~\text{m}$$

Subtopic: Â Applications of PN junction |
Â 79%
From NCERT
NEET - 2019
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A potential barrier of $$0.50$$ V exists across a $$\mathrm{p\text-n}$$ junction. If the depletion region is $$5.0\times10^{-7}~\text{m}$$ wide, the intensity of the electric field in this region is:
 1 $$1.0 \times 10^6 ~\text{V/m}$$ 2 $$1.0 \times 10^5 ~\text{V/m}$$ 3 $$2.0 \times 10^5 ~\text{V/m}$$ 4 $$2.0 \times 10^6 ~\text{V/m}$$
Subtopic: Â PN junction |
Â 82%
From NCERT
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The current through an ideal $$\mathrm{p\text-n}$$ junction diode shown in the circuit will be:

 1 $$5$$ A 2 $$0.2$$ A 3 $$0.6$$ A 4 zero
Subtopic: Â PN junction |
Â 65%
From NCERT
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When a forward bias is applied to a $$\mathrm{p\text-n}$$ junction, then what happens to the potential barrier $$V_B,$$ and the width of charge depleted region $$x$$?
 1 $$V_B$$ increases, $$x$$ decreases 2 $$V_B$$ decreases, $$x$$ increases 3 $$V_B$$  increases, $$x$$ increases 4 $$V_B$$ decreases, $$x$$ decreases
Subtopic: Â PN junction |
Â 69%
From NCERT
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