The zener breakdown will occur if:

1. the impurity level is low.
2. the impurity level is high.
3. the impurity is less on the \(\mathrm{n\text-}\)side.
4. the impurity is less on the \(\mathrm{p\text-}\)side.

Subtopic:  Applications of PN junction |
 76%
From NCERT
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In the circuit shown in the figure, the maximum output voltage \(V_0\) is:

     

1. \(0\) V
2. \(5\) V
3. \(10\) V
4. \(\frac{5}{\sqrt{2}}~\text{V}\)

Subtopic:  Rectifier |
From NCERT
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If the reverse bias in a junction diode is changed from \(5~\text V\) to \(15~\text V\) then the value of current changes from \(38~\mu \text{A}\) to \(88~\mu \text{A}.\) The resistance of the junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

Subtopic:  PN junction |
 84%
From NCERT
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\(\mathrm{p\text-n}\) photodiode is fabricated from a semiconductor with a band gap of \(2.5~\text{eV}.\) It can detect a signal of wavelength:
1. \(6000~\mathring{A}\)
2. \(4000~\text{nm}\)
3. \(6000~\text{nm}\)
4. \(4000~\mathring{A}\)  
Subtopic:  Energy Band theory |
 64%
From NCERT
AIPMT - 2009
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The figure shows a logic circuit with two inputs \(A\) and \(B\) and the output \(C\). The voltage waveforms across \(A\), \(B\), and \(C\) are as given. The logic circuit gate is:
         

1. \(\text{OR}\) gate
2. \(\text{NOR}\) gate
3. \(\text{AND}\) gate
4. \(\text{NAND}\) gate

Subtopic:  Logic gates |
 85%
From NCERT
AIPMT - 2012
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\(\mathrm{C}\) and \(\mathrm{Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(\mathrm{C}\) is an insulator whereas \(\mathrm{Si}\) is an intrinsic semiconductor. This is because:
1. in the case of \(\mathrm{C},\) the valence band is not completely filled at absolute zero temperature.
2. in the case of \(\mathrm{C},\) the conduction band is partly filled even at absolute zero temperature.
3. the four bonding electrons in the case of \(\mathrm{C}\) lie in the second orbit, whereas in the case of \(\mathrm{Si},\) they lie in the third.
4. the four bonding electrons in the case of \(\mathrm{C}\) lie in the third orbit, whereas for \(\mathrm{Si},\) they lie in the fourth orbit.
Subtopic:  Energy Band theory |
 72%
From NCERT
NEET - 2012
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An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}.\) The energy gap is \(1.9~\text{eV}.\) The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26}~ \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

Subtopic:  Applications of PN junction |
 80%
From NCERT
NEET - 2019
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A potential barrier of \(0.50~\text V\) exists across a \(\mathrm{p\text-n}\) junction. If the depletion region is \(5.0\times10^{-7}~\text{m}\) wide, the intensity of the electric field in this region is:
1. \(1.0 \times 10^6 ~\text{V/m}\) 2. \(1.0 \times 10^5 ~\text{V/m}\)
3. \(2.0 \times 10^5 ~\text{V/m}\) 4. \(2.0 \times 10^6 ~\text{V/m}\)
Subtopic:  PN junction |
 83%
From NCERT
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The current through an ideal \(\mathrm{p\text-n}\) junction diode shown in the circuit will be:

 

1. \(5~\text A\)  2. \(0.2~\text A\) 
3. \(0.6~\text A\)  4. zero
Subtopic:  PN junction |
 66%
From NCERT
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When a forward bias is applied to a \(\mathrm{p\text-n}\) junction, then what happens to the potential barrier \(V_B,\) and the width of charge depleted region \(x\)?
1. \(V_B\) increases, \(x\) decreases 2. \(V_B\) decreases, \(x\) increases
3. \(V_B\)  increases, \(x\) increases 4. \(V_B\) decreases, \(x\) decreases
Subtopic:  PN junction |
 71%
From NCERT
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