The solids which have the negative temperature coefficient of resistance are:

\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:

A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:

1. $10\times {10}^{14}$ $\mathrm{Hz}$

2. $5\times {10}^{14}$ $\mathrm{Hz}$

3. $1\times {10}^{14}$ $\mathrm{Hz}$

4. $20\times {10}^{14}$ $\mathrm{Hz}$

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 

1. p-type semiconductor

2. insulator

3. metal

4. n-type semiconductor

Identify the incorrect statement from the following:

Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{C}},{}_{}$ ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Si}}$, and ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Ge}}$ respectively. Which one of the following relationships is true in their case?

1. ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{C}}<{\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Ge}}$

2. ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{C}}>{\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Si}}$

3. ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{C}}={\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Si}}$

4. ${\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{C}}<{\left({\mathrm{E}}_{\mathrm{g}}\right)}_{\mathrm{Si}}$

In semiconductors at room temperature: