The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

 1 current in n-type > current in p-type. 2 no current will flow in p-type, current will only flow in n-type. 3 current in n-type = current in p-type. 4 current in p-type > current in n-type.
Subtopic:  Types of Semiconductors |
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Consider the following statements (A) and (B) and identify the correct answer.

A. A zener diode is connected in reverse bias when used as a voltage regulator.

B. The potential barrier of p-n junction lies between 0.2 V to 0.3 V.

1. (A) is correct and (B) is incorrect.

2. (A) is incorrect and (B) is correct.

3. (A) and (B) both are correct.

4. (A) and (B) both are incorrect.

Subtopic:  Applications of PN junction |
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For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at terminal y?

 1 2 3 4
Subtopic:  Logic gates |
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For the logic circuit shown, the truth table is:

1.
 A B Y 0 0 0 0 1 1 1 0 1 1 1 1
2.
 A B Y 0 0 1 0 1 1 1 0 1 1 1 0
3.
 A B Y 0 0 1 0 1 1 1 0 1 1 1 0
4.
 A B Y 0 0 0 0 1 0 1 0 0 1 1 1

Subtopic:  Logic gates |
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The increase in the width of the depletion region in a p-n junction diode is due to:

1. reverse bias only

2. both forward bias and reverse bias

3. increase in forwarding current

4. forward bias only

Subtopic:  PN junction |
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The solids which have the negative temperature coefficient of resistance are:

1. insulators only

2. semiconductors only

3. insulators and semiconductors

4. metals

Subtopic:  Energy Band theory |
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For transistor action, which of the following statements is correct?

1. Base, emitter, and collector regions should have
the same size

2. Both emitter junction, as well as the collector
junction, are forward biased

3. The base region must be very thin and lightly doped

4. Base, emitter, and collector regions should have
the same doping concentrations

Subtopic:  Transistor |
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Out of the following which one is a forward-biased diode?

 1 2 3 4
Subtopic:  PN junction |
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An n-p-n transistor is connected in a common emitter configuration (see figure) in which collector voltage drop across load resistance ( 800 $\Omega$ ) connected to the collector circuit is 0.8 V. The collector current is:

1.  2 mA

2.  0.1 mA

3.  1 mA

4.  0.2 mA

Subtopic:  Applications of Transistor |
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Which of the following gate is called universal gate?

1. OR gate

2. AND gate

3. NAND gate

4. NOT gate

Subtopic:  Logic gates |
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