Q. No.In the given figure, the potential difference between A and B is:
1.
0
2.
5 volt
3.
10 volt
4.
15 volt
If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across RL will be:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
The given graph represents the V-I characteristic for a semiconductor device. Which of the following statement is correct?
| 1. | It is a V-I characteristic for a solar cell where point A represents open-circuit voltage and point B represents short-circuit current. |
| 2. | It is for a solar cell and points A and B represent open-circuit voltage and current respectively. |
| 3. | It is for a photodiode and points A and B represent open-circuit voltage and current respectively. |
| 4. | It is for a LED and points A and B represent open-circuit voltage and short circuit current respectively. |
Pure Si at 500 K has equal number of electron and hole concentration of Doping by indium increases to The doped semiconductor is of:
| 1. | n-type with electron concentration \(n_{e}=5\times10^{22}~m^{-3}\) |
| 2. | p-type with electron concentration \(n_{e}=2.5\times10^{23}~m^{-3}\) |
| 3. | n-type with electron concentration \(n_{e}=2.5\times10^{10}~m^{-3}\) |
| 4. | p-type with electron concentration \(n_{e}=5\times10^{9}~m^{-3}\) |
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit, as shown in the figure. The current through the diode is:
1. 10 mA
2. 15 mA
3. 20 mA
4. 5 mA
Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by \(\left(E_g\right)_C,(E_g)_{Si}~\text{and}~(E_g)_{Ge}\) respectively. Which one of the following relationships is true in their case?
| 1. | \(\left(E_g\right)_C<\left(E_g\right)_{G e} \) | 2. | \(\left(E_g\right)_C>\left(E_g\right)_{S i} \) |
| 3. | \(\left(E_g\right)_C=\left(E_g\right)_{S i} \) | 4. | \(\left(E_g\right)_C<\left(E_g\right)_{S i}\) |
In a PN-junction diode:
| 1. | the current in the reverse biased condition is generally very small. |
| 2. | the current in the reverse biased condition is small but the forward-biased current is independent of the bias voltage. |
| 3. | the reverse-biased current is strongly dependent on the applied bias voltage. |
| 4. | the forward-biased current is very small in comparison to reverse-biased current. |
The electrical circuit used to get smooth output from a rectifier circuit is called:
1. oscillator.
2. filter.
3. amplifier.
4. logic gates.
Two PN-junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:
| 1. | In the circuit (1) and (2) |
| 2. | In the circuit (2) and (3) |
| 3. | In the circuit (1) and (3) |
| 4. | Only in the circuit (1) |
A semiconductor is known to have an electron concentration of cm-3 and a hole concentration of cm-3. The semiconductor is:
1. n-type
2. p-type
3. intrinsic
4. insulator
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