A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is:

1.	\(1.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)	2.	\(1.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)
3.	\(2.0 \times 10^5 \mathrm{~V} / \mathrm{m}\)	4.	\(2.0 \times 10^6 \mathrm{~V} / \mathrm{m}\)

The current through an ideal p-n junction diode shown in the circuit will be:

1.  5 A

2.  0.2 A 

3.  0.6 A

4.  Zero

Which logic gate is represented by the following combination of logic gates?
   
1. OR

2. NAND

3. AND

4. NOR

In a p-n junction diode not connected to any circuit:

When a forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{\mathit{B}}$, and the width of charge depleted region x?

Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

1.		2.
3.		4.

An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:

A and B are the inputs for the given logic gate. The output Y will be:

1.		2.
3.		4.

A Zener diode is shown in the following circuit diagram. When the source voltage fluctuates such that $V>V_z$, then:
   

1. all the current I₁, I₂ and I₃ change.

2. only I₁ and I₂ change and I₃ remains constant.

3. only I₁ and I₃ change and I₂ remains constant.

4. all the currents remain constant.