In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:

1. p-type semiconductor

2. insulator

3. metal

4. n-type semiconductor

Subtopic:  Energy Band theory |
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In a good conductor, the energy gap between the conduction band and the valence band is:
1. Infinite
2. Wide
3. Narrow
4. Zero

Subtopic:  Energy Band theory |
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Identify the incorrect statement from the following:

 1 The resistivity of a semiconductor increases with an increase in temperature. 2 Substances with an energy gap of the order of 10 eV are insulators. 3 In conductors, the valence and conduction bands may overlap. 4 The conductivity of a semiconductor increases with an increase in temperature.
Subtopic:  Energy Band theory |
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Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy gaps represented by ${\left({E}_{g}\right)}_{C}$,${\left({E}_{g}\right)}_{Si}$ and ${\left({E}_{g}\right)}_{Ge}$ respectively. Which one of the following relationships is true in their case?

1. ${\left({E}_{g}\right)}_{C}$<${\left({E}_{g}\right)}_{Ge}$

2. ${\left({E}_{g}\right)}_{C}$>${\left({E}_{g}\right)}_{Si}$

3. ${\left({E}_{g}\right)}_{C}$=${\left({E}_{g}\right)}_{Si}$

4. ${\left({E}_{g}\right)}_{C}$<${\left({E}_{g}\right)}_{Si}$

Subtopic:  Energy Band theory |
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The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:

 1 sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively. 2 sample X is undoped while both samples Y and Z have been doped with a fifth group impurity. 3 sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped. 4 sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively.
Subtopic:  Energy Band theory |
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In semiconductors at room temperature:

 1 the valence band is completely filled and the conduction band is partially filled. 2 the valence band is completely filled. 3 the conduction band is completely empty. 4 the valence band is partially empty and the conduction band is partially filled.
Subtopic:  Energy Band theory |
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p-n photodiode is fabricated from a semiconductor with a band-gap of 2.5 eV. It can detect a signal of wavelength:
1. 6000 Å
2. 4000 nm
3. 6000 nm
4. 4000 Å

Subtopic:  Energy Band theory |
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How much is the forbidden gap in the energy bands of germanium at room temperature?
1. 1.1 eV

2. 0.1 eV

3. 0.67 eV

4. 6.7 eV

Subtopic:  Energy Band theory |
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Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

 1 2 3 4
Subtopic:  Energy Band theory |
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A semiconductor is known to have an electron concentration of $8×{10}^{13}$ cm-3 and a hole concentration of $5×{10}^{2}$ cm-3. The semiconductor is:

1.  n-type

2.  p-type

3.  intrinsic

4.  insulator

Subtopic:  Types of Semiconductors |
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