One part of a device is connected to the negative terminal of a battery and the other part is connected to the positive terminal of a battery. If their ends are now altered, current does not flow in circuit. The device is:
1. \(\mathrm{p\text-n}\) Junction
2. Transistor
3. Zener diode
4. Triode

Subtopic:  PN junction |
 73%
From NCERT
AIPMT - 1998
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Zener diode is used for:

1. rectification.

2. stabilisation.

3. amplification.

4. producing oscillations in an oscillator.

Subtopic:  Applications of PN junction |
 71%
From NCERT
AIPMT - 2005
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From the following diode circuit, which diode is in forward biased condition:

1. 2.
3. 4.
Subtopic:  PN junction |
 92%
From NCERT
AIPMT - 2000
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Given Truth table is correct for:
\(A\) \(B\) \(Y\)
\(1\) \(1\) \(1\)
\(1\) \(0\) \(0\)
\(0\) \(1\) \(0\)
\(0\) \(0\) \(0\)
1. NAND
2. AND
3. NOR
4. OR

Subtopic:  Logic gates |
 86%
From NCERT
AIPMT - 2000
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Identify the incorrect statement from the following:
1. The resistivity of a semiconductor increases with an increase in temperature.
2. Substances with an energy gap of the order of \(10\) eV are insulators.
3. In conductors, the valence and conduction bands may overlap.
4. The conductivity of a semiconductor increases with an increase in temperature.
Subtopic:  Energy Band theory |
 78%
From NCERT
AIPMT - 2005
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Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si, and (Eg)Ge respectively. Which one of the following relationships is true in their case?

1. (Eg)C<(Eg)Ge

2. (Eg)C>(Eg)Si

3. (Eg)C=(Eg)Si

4. (Eg)C<(Eg)Si

Subtopic:  Energy Band theory |
 77%
From NCERT
AIPMT - 2005
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Application of a forward bias to a \(\mathrm{p\text-n}\) junction:
1. widens the depletion zone.
2. increases the number of donors on the n side.
3. increases the potential difference across the depletion zone.
4. increases the electric field in the depletion zone.
Subtopic:  PN junction |
 55%
From NCERT
AIPMT - 2005
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The cause of potential barrier in a \(\mathrm{p\text-n}\) junction diode is:
1. Concentration of positive and negative ions near the junction.
2. Concentration of positive charges near the junction.
3. Depletion of negative charges near the junction.
4. Increment in concentration of holes and electrons near the junction.
Subtopic:  PN junction |
 67%
From NCERT
AIPMT - 1998
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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
 

1. 2.
3. 4.

Subtopic:  PN junction |
 83%
From NCERT
AIPMT - 2004
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The truth table for the following network is:

1.
\(A\) \(B\) \(Y\)
\(0\) \(0\) \(0\)
\(0\) \(1\) \(0\)
\(1\) \(0\) \(0\)
\(1\) \(1\) \(1\)
2.
\(A\) \(B\) \(Y\)
\(0\) \(0\) \(0\)
\(0\) \(1\) \(1\)
\(1\) \(0\) \(1\)
\(1\) \(1\) \(0\)
3.
\(A\) \(B\) \(Y\)
\(0\) \(0\) \(1\)
\(0\) \(1\) \(0\)
\(1\) \(0\) \(0\)
\(1\) \(1\) \(1\)
4. None of the above
Subtopic:  Logic gates |
 76%
From NCERT
AIPMT - 1999
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