In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)
If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown,
then the output across \(R_L\) will be:
1. | 2. | ||
3. | 4. |
The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
(a) | type of semiconductor material |
(b) | amount of doping |
(c) | temperature |
Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)
1. | the attraction of free electrons of the \(\mathrm{n\text{-}}\)region. |
2. | the higher hole concentration in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
3. | the higher concentration of electrons is in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. |
4. | the potential difference across the \(\mathrm{p\text{-}n}\) junction. |
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
1. | \(0.75~\text{A}\) | 2. | zero |
3. | \(0.25~\text{A}\) | 4. | \(0.5~\text{A}\) |
1. | the positive terminal of the battery is connected to the p-side and the depletion region becomes thick. |
2. | the negative terminal of the battery is connected to the n-side and the depletion region becomes thin. |
3. | the positive terminal of the battery is connected to the n-side and the depletion region becomes thin. |
4. | the negative terminal of the battery is connected to the p-side and the depletion region becomes thick. |
(a) | |
(b) | |
(c) | |
(d) |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
Which of the following is an example of forward biasing?
1. | 2. | ||
3. | 4. |