\({C}\) and \({Si}\) both have the same lattice structure, having \(4\) bonding electrons in each. However, \(C\) is an insulator whereas \(Si\) is an intrinsic semiconductor. This is because:
1. in the case of \(C\), the valence band is not completely filled at absolute zero temperature.
2. in the case of \(C\), the conduction band is partly filled even at absolute zero temperature.
3. the four bonding electrons in the case of \(C\) lie in the second orbit, whereas in the case of \(Si\), they lie in the third.
4. the four bonding electrons in the case of \(C\) lie in the third orbit, whereas for \(Si\), they lie in the fourth orbit.
Subtopic:  Energy Band theory |
 71%
From NCERT
NEET - 2012
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\(\mathrm{p\text-n}\) photodiode is fabricated from a semiconductor with a band gap of \(2.5\) eV. It can detect a signal of wavelength:
1. \(6000~\mathring{A}\)
2. \(4000\) nm
3. \(6000\) nm
4. \(4000~\mathring{A}\)  
Subtopic:  Energy Band theory |
 63%
From NCERT
AIPMT - 2009
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A p-n photodiode is made of a material with a bandgap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly:

1. 10×1014 Hz

2. 5×1014 Hz

3. 1×1014 Hz

4. 20×1014 Hz

Subtopic:  Energy Band theory | Applications of PN junction |
 81%
From NCERT
AIPMT - 2008
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In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 

1. p-type semiconductor

2. insulator

3. metal

4. n-type semiconductor

Subtopic:  Energy Band theory |
 72%
From NCERT
AIPMT - 2007
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