Carbon, silicon, and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by the energy bandgap respectively equal to \((E_g)_C, (E_g)_{Si}~\text{and}~(E_g)_{Ge}\). Which of the following statements is true?

1. \((E_g)_{Si} < (E_g)_{Ge}<(E_g)_{C}\)
2. \((E_g)_{C} < (E_g)_{Ge}>(E_g)_{Si}\)
3. \((E_g)_{C} > (E_g)_{Si}>(E_g)_{Ge}\)
4. \((E_g)_{C} =(E_g)_{Si}=(E_g)_{Ge}\)
 

Subtopic:  Energy Band theory |
 72%
From NCERT
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NEET 2023 - Target Batch - Aryan Raj Singh
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NEET 2023 - Target Batch - Aryan Raj Singh

In an intrinsic semiconductor, the energy gap Eg is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by, 

ni=n0exp-Eg2KBT where n0 is a constant.

1. \(1.01\times10^6:1\)
2. \(1.09\times10^5:1\)
3. \(1:1\)
4. \(1:2\)

Subtopic:  Energy Band theory |
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NEET 2023 - Target Batch - Aryan Raj Singh
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