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Q. No.The following table is for which logic gate?
Input
Output
A
B
C
0
0
1
0
1
1
1
0
1
1
1
0
1. AND
2. OR
3. NAND
4. NOT
1. AND
2. OR
3. NAND
4. NOT
Subtopic: Logic gates |
88%
Level 1: 80%+
AIPMT - 1998
Hints
Zener diode is used for:
1. rectification.
2. stabilisation.
3. amplification.
4. producing oscillations in an oscillator.
Subtopic: Applications of PN junction |
74%
Level 2: 60%+
AIPMT - 2005
Hints
Given Truth table is correct for:
1. NAND
2. AND
3. NOR
4. OR
| \(A\) | \(B\) | \(Y\) |
| \(1\) | \(1\) | \(1\) |
| \(1\) | \(0\) | \(0\) |
| \(0\) | \(1\) | \(0\) |
| \(0\) | \(0\) | \(0\) |
2. AND
3. NOR
4. OR
Subtopic: Logic gates |
87%
Level 1: 80%+
AIPMT - 2000
Hints
Identify the incorrect statement from the following:
| 1. | The resistivity of a semiconductor increases with an increase in temperature. |
| 2. | Substances with an energy gap of the order of \(10~\text{eV}\) are insulators. |
| 3. | In conductors, the valence and conduction bands may overlap. |
| 4. | The conductivity of a semiconductor increases with an increase in temperature. |
Subtopic: Energy Band theory |
81%
Level 1: 80%+
AIPMT - 2005
Hints
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Application of a forward bias to a \(\mathrm{p\text-n}\) junction:
| 1. | widens the depletion zone. |
| 2. | increases the number of donors on the n side. |
| 3. | increases the potential difference across the depletion zone. |
| 4. | increases the electric field in the depletion zone. |
Subtopic: PN junction |
58%
Level 3: 35%-60%
AIPMT - 2005
Hints
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: PN junction |
85%
Level 1: 80%+
AIPMT - 2004
Hints
The truth table for the following network is:
| 1. |
|
|||||||||||||||
| 2. |
|
|||||||||||||||
| 3. |
|
|||||||||||||||
| 4. | None of the above |
Subtopic: Logic gates |
79%
Level 2: 60%+
AIPMT - 1999
Hints
In semiconductors at room temperature:
| 1. | The valence band is completely filled and the conduction band is partially filled. |
| 2. | The valence band is completely filled. |
| 3. | The conduction band is completely empty. |
| 4. | The valence band is partially empty and the conduction band is partially filled. |
Subtopic: Energy Band theory |
72%
Level 2: 60%+
AIPMT - 2004
Hints
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In a p–n junction photocell, the value of the photo electromotive force produced by monochromatic light is proportional to:
| 1. | the intensity of the light falling on the cell. |
| 2. | the frequency of the light falling on the cell. |
| 3. | the voltage applied at the p–n junction. |
| 4. | the barrier voltage at the p–n junction. |
Subtopic: PN junction |
61%
Level 2: 60%+
AIPMT - 2004
Hints
For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across \(R\) is \(V.\) |
| 2. | In R.B. the voltage across \(R\) is \(V.\) |
| 3. | In F.B. the voltage across \(R\) is \(2V.\) |
| 4. | In R.B. the voltage across \(R\) is \(2V.\) |
Subtopic: PN junction |
81%
Level 1: 80%+
AIPMT - 2002
Hints
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