The following table is for which logic gate?

Input Output
A B C
0 0 1
0 1 1
1 0 1
1 1 0


1. AND
2. OR
3. NAND
4. NOT

Subtopic:  Logic gates |
 88%
Level 1: 80%+
AIPMT - 1998
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The following logic gate is:
 
1. AND 
2. NAND 
3. EX-OR 
4. OR 
Subtopic:  Logic gates |
 94%
Level 1: 80%+
AIPMT - 1998
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One part of a device is connected to the negative terminal of a battery and the other part is connected to the positive terminal of a battery. If their ends are now altered, current does not flow in circuit. The device is:
1. \(\mathrm{p\text-n}\) Junction
2. Transistor
3. Zener diode
4. Triode

Subtopic:  PN junction |
 75%
Level 2: 60%+
AIPMT - 1998
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Zener diode is used for:

1. rectification.

2. stabilisation.

3. amplification.

4. producing oscillations in an oscillator.

Subtopic:  Applications of PN junction |
 74%
Level 2: 60%+
AIPMT - 2005
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From the following diode circuit, which diode is in forward biased condition:

1. 2.
3. 4.
Subtopic:  PN junction |
 93%
Level 1: 80%+
AIPMT - 2000
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Given Truth table is correct for:
\(A\) \(B\) \(Y\)
\(1\) \(1\) \(1\)
\(1\) \(0\) \(0\)
\(0\) \(1\) \(0\)
\(0\) \(0\) \(0\)
1. NAND
2. AND
3. NOR
4. OR

Subtopic:  Logic gates |
 87%
Level 1: 80%+
AIPMT - 2000
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Identify the incorrect statement from the following:
1. The resistivity of a semiconductor increases with an increase in temperature.
2. Substances with an energy gap of the order of \(10~\text{eV}\) are insulators.
3. In conductors, the valence and conduction bands may overlap.
4. The conductivity of a semiconductor increases with an increase in temperature.
Subtopic:  Energy Band theory |
 80%
Level 1: 80%+
AIPMT - 2005
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Carbon, Silicon, and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si, and (Eg)Ge respectively. Which one of the following relationships is true in their case?

1. (Eg)C<(Eg)Ge

2. (Eg)C>(Eg)Si

3. (Eg)C=(Eg)Si

4. (Eg)C<(Eg)Si

Subtopic:  Energy Band theory |
 77%
Level 2: 60%+
AIPMT - 2005
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Application of a forward bias to a \(\mathrm{p\text-n}\) junction:
1. widens the depletion zone.
2. increases the number of donors on the n side.
3. increases the potential difference across the depletion zone.
4. increases the electric field in the depletion zone.
Subtopic:  PN junction |
 57%
Level 3: 35%-60%
AIPMT - 2005
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The cause of potential barrier in a \(\mathrm{p\text-n}\) junction diode is:
1. Concentration of positive and negative ions near the junction.
2. Concentration of positive charges near the junction.
3. Depletion of negative charges near the junction.
4. Increment in concentration of holes and electrons near the junction.
Subtopic:  PN junction |
 71%
Level 2: 60%+
AIPMT - 1998
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