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The incorrect statement among the following regarding crystalline solid is -

1. Definite and characteristic heat of fusion.
2. Isotropic nature.
3. A regular periodically repeated pattern of arrangement of constituent particles in the entire crystal.
4. A true solid.

Subtopic:  Introduction & Crystal System |
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An example of amorphous solid among the following is -

1. Graphite (C)

2. Quartz glass (SiO2)

3. Chrome alum

4. Silicon carbide (SiC)

Subtopic:  Introduction & Crystal System |
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Which of the following arrangements shows the schematic alignment of magnetic moments of antiferromagnetic substances? 

1.      

2.      

3.      

4.      

Subtopic:  Magnetic Behaviour of an Element/Compound |
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Incorrect statement among the following about amorphous solids is -

1. On heating they may become crystalline at a certain temperature.
2. They may become crystalline on keeping for a long time.
3. Amorphous solids can be moulded by heating.
4. They are anisotropic in nature.

Subtopic:  Introduction & Crystal System |
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Network solid, among the following, is :

1. SO2(solid)

2. I2

3. Diamond

4. H2O(ice)

Subtopic:  Introduction & Crystal System |
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I. Mg(s)

II. TiO(s)

III. I2(s)

IV. H2O(s)

The insulator among the given examples is -

1. Only I

2. Only II

3. III and IV

4. II, III, and IV

Subtopic:  Imperfections in Solids & Semiconductors |
Level 3: 35%-60%
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Schottky defect is observed in crystals when:

1. Some cations move from their lattice site to interstitial sites.
2. Equal number of cations and anions are missing from the lattice.
3. Some lattice sites are occupied by electrons.
4. Some impurities are present in the lattice.

Subtopic:  Imperfections in Solids & Semiconductors |
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Chargewise p-type semiconductor is -

1. Positive.

2. Neutral.

3. Negative.

4. Depends on the concentration of p impurity.

Subtopic:  Imperfections in Solids & Semiconductors |
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To get a n-type semiconductor from silicon, it should be doped with a substance with valency -

1.  2

2.  1

3.  3

4.  5

Subtopic:  Imperfections in Solids & Semiconductors |
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The total number of tetrahedral voids in the face centered unit cell is -

1. 6

2. 8

3. 10

4. 12

Subtopic:  Voids, Radius Ratio & Coordination Number |
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