Q. No.
| 1. | electrons travel across the junction due to potential difference |
| 2. | electron concentration in the n-region is more as compared to that in the p-region |
| 3. | only electrons move from the n to p region and not the vice-versa. |
| 4. | holes in the p-region attract them |
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
The ammeter reading for the silicon diode in the given circuit is:
| 1. | \(0\) | 2. | \(15~\text{mA}\) |
| 3. | \(11.5~\text{mA}\) | 4. | \(13.5~\text{mA}\) |
A diode with a forward bias voltage drop of \(0.5~\text{V}\) has a maximum safe current rating of \(10~\text{mA}.\) Suppose this diode is connected in series with a resistor to a battery of EMF \(1.5~\text{V}.\)What minimum resistance value is required to ensure the current does not exceed the diode's safe operating limit?
1. \(300~\Omega \)
2. \(50~\Omega \)
3. \(100~\Omega \)
4. \(200~\Omega\)
In connection with the circuit drawn below, the value of the current flowing through \(2~\text{k}\Omega\) resistor is:
1. \(5 \times 10^{-4} ~\text A\)
2. \(5 \times 10^{-3} ~\text A\)
3. \(25 \times 10^{-4} ~\text A\)
4. \(25 \times 10^{-3}~\text A\)
The circuit contains two diodes each with a forward resistance of \(50 ~\Omega\) and with infinite reverse resistance. If the battery voltage is \(6~\text V,\) the current through the \(120 ~\Omega\) resistance is:
1. \(10~\text{mA}\)
2. \(20~\text{mA}\)
3. \(30~\text{mA}\)
4. \(40~\text{mA}\)
1. \(1:2\)
2. \(5:1\)
3. \(1:40\)
4. \(20:1\)
1. \(4~\text{A}\)
2. \(3~\text{A}\)
3. \(2~\text{A}\)
1. \(1~\text{A}\)
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