The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
1. | current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type. |
2. | no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type. |
3. | current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type. |
4. | current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type. |
An intrinsic semiconductor is converted into an \(\mathrm{n\text{-}}\)type extrinsic semiconductor by doping it with:
1. phosphorous
2. aluminium
3. silver
4. germanium
For a \(\mathrm{p}\text{-}\)type semiconductor, which of the following statements is true?
1. | Electrons are the majority carriers and pentavalent atoms are the dopants. |
2. | Electrons are the majority carriers and trivalent atoms are the dopants. |
3. | Holes are the majority carriers and trivalent atoms are the dopants. |
4. | Holes are the majority carriers and pentavalent atoms are the dopants. |
1. | Electrons are minority carriers and pentavalent atoms are dopants. |
2. | Holes are minority carriers and pentavalent atoms are dopants. |
3. | Holes are the majority carriers and trivalent atoms are dopants. |
4. | Electrons are the majority carriers and trivalent atoms are dopants. |
1. | the antimony becomes an acceptor atom |
2. | there will be more free electrons than holes in the semiconductor |
3. | its resistance is increased |
4. | it becomes a \(p\small{-}\)type semiconductor |
1. | \(p\)-type with electron concentration \(n_e=5\times10^9~\text{m}^{-3}\). |
2. | \(n\)-type with electron concentration \(n_e=5\times10^{22}~\text{m}^{-3}\). |
3. | \(p\)-type with electron concentration \(n_e=2.5\times10^{10}~\text{m}^{-3}\). |
4. | \(n\)-type with electron concentration \(n_e=2.5\times10^{23}~\text{m}^{-3}\). |
Which one of the following statements is false?
1. | Pure Si doped with trivalent impurities gives a p-type semiconductor. |
2. | The majority of carriers in an n-type semiconductor are holes. |
3. | The minority carriers in a p-type semiconductor are electrons. |
4. | The resistance of intrinsic semiconductors decreases with an increase in temperature. |