Q. No.One part of a device is connected to the negative terminal of a battery and the other part is connected to the positive terminal of a battery. If their ends are now altered, current does not flow in circuit. The device is:
1. P-N Junction
2. Transistor
3. Zener diode
4. Triode
The cause of potential barrier in a P-N junction diode is:
| 1. | Concentration of positive and negative ions near the junction. |
| 2. | Concentration of positive charges near the junction. |
| 3. | Depletion of negative charges near the junction. |
| 4. | Increment in concentration of holes and electrons near the junction. |
The depletion layer has (for an unbiased \(p-n\) junction):
1. electrons
2. holes
3. static ions
4. neutral atoms
The current \((I)\) in the circuit will be:
1. \(\frac{5}{40}~\text{A}\)
2. \(\frac{5}{50}~\text{A}\)
3. \(\frac{5}{10}~\text{A}
\)
4. \(\frac{5}{20}~\text{A}\)
What is the correct statement regarding a p-n junction:
| 1. | high potential at the n side and low potential at the p side |
| 2. | high potential at the p side and low potential at the n side |
| 3. | p and n both are at the same potential |
| 4. | undetermined |
For the given circuit of the P-N junction diode, which of the following statements is correct?
| 1. | In F.B. the voltage across R is V. |
| 2. | In R.B. the voltage across R is V. |
| 3. | In F.B. the voltage across R is 2V. |
| 4. | In R.B. the voltage across R is 2V. |
Reverse-bias applied to a junction diode:
| 1. | lowers the potential barrier |
| 2. | raises the potential barrier |
| 3. | increases the majority carrier current |
| 4. | increases the minority carrier's current |
The barrier potential of a p-n junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
| 1. |  |
2. |  |
| 3. |  |
4. |  |
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