List-I | List-II | ||
(a) | intrinsic semiconductor | (e) | prepared by adding phosphorus |
(b) | \(\mathrm{n}\text-\)type semiconductor | (f) | the width is nearly one micron |
(c) | \(\mathrm{p}\text-\)type semiconductor | (g) | silicon |
(d) | depletion layer | (h) | prepared by adding indium |
1. | a-g, b-e, c-h, d-f |
2. | a-h, b-f, c-e, d-g |
3. | a-e, b-g, c-f, d-h |
4. | a-f, b-h, c-g, d-e |
1. | increase its electrical resistivity |
2. | increase its electrical conductivity |
3. | increase its life |
4. | enable it to tolerate higher voltage |
A semiconductor is known to have an electron concentration of \(8\times 10^{13}~\text{cm}^{-3}\) and a hole concentration of \(5\times 10^{2}~\text{cm}^{-3}\). The semiconductor is:
1. | \(\mathrm{n}\text-\)type | 2. | \(\mathrm{p}\text-\)type |
3. | intrinsic | 4. | insulator |
1. | an anti-particle of electron. |
2. | a vacancy created when an electron leaves a covalent bond. |
3. | absence of free electrons. |
4. | an artificially created particle. |
1. | \(10^{10}~\text{m}^{-3}\) | 2. | \(10^{14}~\text{m}^{-3}\) |
3. | \(10^{19}~\text{m}^{-3}\) | 4. | \(10^{18}~\text{m}^{-3}\) |
1. | Indium | 2. | Antimony |
3. | Germanium | 4. | Carbon |
If a small amount of aluminium is added to the silicon crystal:
1. | its resistance decreases. |
2. | it becomes a \(\mathrm{p\text-}\)type semiconductor. |
3. | there will be fewer free electrons than holes in the semiconductor. |
4. | All of these are correct. |
1. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=5\times10^{22}~\text{m}^{-3}\) |
2. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=2.5\times10^{23}~\text{m}^{-3}\) |
3. | \(\mathrm{n}\text-\)type with electron concentration \(n_{e}=2.5\times10^{10}~\text{m}^{-3}\) |
4. | \(\mathrm{p}\text-\)type with electron concentration \(n_{e}=5\times10^{9}~\text{m}^{-3}\) |