The energy band diagrams for semiconductor samples of silicon are as shown. We can assert that:

          

1.	sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively.
2.	sample X is undoped while both samples Y and Z have been doped with a fifth group impurity.
3.	sample X has been doped with equal amounts of third and fifth group impurities while samples Y and Z are undoped.
4.	sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively.

For a diode connected in parallel with a resistor, Choose the correct graph between \((I)\) and \((V)\) for the given circuit:

1.		2.
3.		4.

A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is $5.0\times {10}^{-7}$ m wide, the intensity of the electric field in this region is:

If the reverse bias in a junction diode is changed from \(5\) V to \(15\) V then the value of current changes from \(38\) \(\mu \text{A}\) to \(88\) \(\mu \text{A}.\) The resistance of junction diode will be:
1. \(4\times10^{5}\) 
2. \(3\times10^{5}\)
3. \(2\times10^{5}\)
4. \(10^{6}\)

The current through an ideal p-n junction diode shown in the circuit will be:

1.  5 A

2.  0.2 A 

3.  0.6 A

4.  Zero

In a p-n junction diode not connected to any circuit:

When a forward bias is applied to a p-n junction, then what happens to the potential barrier $V_{\mathit{B}}$, and the width of charge depleted region x?

Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

1.		2.
3.		4.

In the circuit shown in the figure, the maximum output voltage V_o is:

1. 0 V

2. 5 V

3. 10 V

4. $\frac{5}{\sqrt{2}} V$

In the circuit given below, if V(t) is the sinusoidal voltage source, then the voltage drop V_AB(t) across the resistance R: