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Q. No.
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In an unbiased p-n junction electrons diffuse from the n-region to the p-region because:
| 1. | electrons travel across the junction due to potential difference |
| 2. | electron concentration in the n-region is more as compared to that in the p-region |
| 3. | only electrons move from the n to p region and not the vice-versa. |
| 4. | holes in the p-region attract them |
Subtopic: PN junction |
80%
Level 1: 80%+
JEE
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A \(2~\text V\) battery is connected across \({AB}\) as shown in the figure. The value of the current supplied by the battery when in one case battery's positive terminal is connected to \(A\) and in another case when the positive terminal of the battery is connected to \({B}\) will respectively be:
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
Subtopic: Applications of PN junction |
88%
Level 1: 80%+
JEE
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The value of the resistor \({R_s},\) needed in the DC voltage regulator circuit shown here, equals:
1. \({\frac{\left(V_i-V_L\right)}{(n+1) I_L}}\)
2. \({\frac{\left(V_i+V_L\right)}{(n+1) I_L}}\)
3. \({\frac{\left(V_i-V_L\right)}{n I_L}}\)
4. \({\frac{\left(V_i+V_L\right)}{n I_L}}\)
1. \({\frac{\left(V_i-V_L\right)}{(n+1) I_L}}\)
2. \({\frac{\left(V_i+V_L\right)}{(n+1) I_L}}\)
3. \({\frac{\left(V_i-V_L\right)}{n I_L}}\)
4. \({\frac{\left(V_i+V_L\right)}{n I_L}}\)
Subtopic: Applications of PN junction |
78%
Level 2: 60%+
JEE
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The temperature dependence of resistances of \(\mathrm{Cu}\) and undoped \(\mathrm{Si}\) in the temperature range \(300\text-400~\text{K}\), is best described by:
| 1. | Linear increase for \(\mathrm{Cu}\), linear increase for \(\mathrm{Si}\) |
| 2. | Linear increase for \(\mathrm{Cu}\), exponential increase for \(\mathrm{Si}\) |
| 3. | Linear increase for \(\mathrm{Cu}\), exponential decrease for \(\mathrm{Si}\) |
| 4. | Linear decrease for \(\mathrm{Cu}\), linear decrease for \(\mathrm{Si}\) |
Subtopic: Types of Semiconductors |
69%
Level 2: 60%+
JEE
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If \(a,b,c,\) and \(d\) are inputs to a logic gate and \(x\) is its output, then based on the timing diagram shown below, what type of gate is this?
1. NOT
2. AND
3. OR
4. NAND
Subtopic: Logic gates |
74%
Level 2: 60%+
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Match the semiconductor devices with their corresponding characteristic graphs labeled \(\mathrm{(a),(b),(c)}\) and \(\mathrm{(d)}.\)
Select the correct sequence from the options given below:
| 1. | \(\mathrm{(a)}-\)Simple diode; \(\mathrm{(b)}-\)Zener diode; \(\mathrm{(c)}-\)Solar cell; \(\mathrm{(d)}-\)Light-dependent resistance |
| 2. | \(\mathrm{(a)}-\)Solar cell; \(\mathrm{(b)}-\)Zener diode; \(\mathrm{(c)}-\)Simple diode; \(\mathrm{(d)}-\)Light-dependent resistance |
| 3. | \(\mathrm{(a)}-\)Zener diode; \(\mathrm{(b)}-\)Simple diode; \(\mathrm{(c)}-\)Solar cell; \(\mathrm{(d)}-\)Light-dependent resistance |
| 4. | \(\mathrm{(a)}-\)Solar cell; \(\mathrm{(b)}-\)Simple diode; \(\mathrm{(c)}-\)Light-dependent resistance; \(\mathrm{(d)}-\)Zener diode |
Subtopic: Applications of PN junction |
77%
Level 2: 60%+
JEE
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The \(V\text-I\) characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
Subtopic: PN junction |
73%
Level 2: 60%+
JEE
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What is the conductivity of a semiconductor sample having electron concentration of \(5\times10^{18}~\text{m}^{-3},\) hole concentration of \(5\times10^{19}~\text{m}^{-3},\) electron mobility of \(2.0~\text{m}^2~\text{V}^{-1}\text{s}^{-1}\) and hole mobility of \(0.01~\text{m}^2\text{V}^{-1}~\text{s}^{-1}?\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
Subtopic: Types of Semiconductors |
74%
Level 2: 60%+
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The ammeter reading for the silicon diode in the given circuit is:
| 1. | \(0\) | 2. | \(15~\text{mA}\) |
| 3. | \(11.5~\text{mA}\) | 4. | \(13.5~\text{mA}\) |
Subtopic: PN junction |
Level 4: Below 35%
JEE
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