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| \((\mathrm{A})\) | When the forward bias voltage across a \(\mathrm{p\text{-}n}\) junction diode increases above a certain threshold voltage, the diode current increases significantly. |
| \((\mathrm{B})\) | This current is called reverse saturation current. |
| 1. | Both Statements \((\mathrm{A})\) and \((\mathrm{B})\) are False. |
| 2. | Statement \((\mathrm{A})\) is True, but Statement \((\mathrm{B})\) is False. |
| 3. | Both Statements \((\mathrm{A})\) and \((\mathrm{B})\) are True. |
| 4. | Statement \((\mathrm{A})\) is False, but Statement \((\mathrm{B})\) is True. |
| 1. | \(D_1\) and \(D_2\) both are forward biased |
| 2. | \(D_1\) and \(D_2\) both are reverse biased |
| 3. | Neither \(D_1\) nor \(D_2\) conducts at any time |
| 4. | \(D_1\) is reverse biased, \(D_2\) is forward biased |
| 1. | OR | 2. | NOR |
| 3. | AND | 4. | NAND |
| A. | For a solar-cell, the \(I\text-V\) characteristics lies in the IV quadrant of the given graph. |
| B. | In a reverse-biased pn junction diode, the current measured in (\(\mu \text{A}\)), is due to majority charge carriers. |
| 1. | A is incorrect but B is correct. |
| 2. | Both A and B are correct. |
| 3. | Both A and B are incorrect. |
| 4. | A is correct but B is incorrect. |
| \(A\) | \(B\) | \(Y\) |
| 0 0 1 1 |
0 1 0 1 |
1 0 1 0 |
| 1. | \(\text{NOR}\) gate | 2. | \(\text{OR}\) gate |
| 3. | \(\text{AND}\) gate | 4. | \(\text{NAND}\) gate |
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| 1. | forward biased Zener diode. |
| 2. | type of light-emitting diode. |
| 3. | diode working on the principle of photo-voltaic effect. |
| 4. | type of photo-diode with external biasing. |