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Q. No.The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
| (a) | type of semiconductor material |
| (b) | amount of doping |
| (c) | temperature |
Which one of the following is correct?
| 1. | (a) and (b) only | 2. | (b) only |
| 3. | (b) and (c) only | 4. | (a), (b) and (c) |
Subtopic: Â PN junction |
 84%
Level 1: 80%+
NEET - 2014
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Subtopic: Â Logic gates |
 76%
Level 2: 60%+
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In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
Subtopic: Â PN junction |
 61%
Level 2: 60%+
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The \((I\text-V)\) characteristics of a \(\mathrm{p\text-n}\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(\mathrm{p\text-n}\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
Subtopic: Â PN junction |
 70%
Level 2: 60%+
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The LED:
| 1. | is reverse-biased. |
| 2. | is forward-biased. |
| 3. | can be made of \(\mathrm{GaAs}.\) |
| 4. | both (2) and (3) are correct. |
Subtopic: Â Applications of PN junction |
 72%
Level 2: 60%+
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In the following figure, the diodes which are forward biased are:
| (a) |  |
| (b) |  |
| (c) |  |
| (d) |  |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
Subtopic: Â PN junction |
 86%
Level 1: 80%+
AIPMT - 2011
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In the circuit shown in the diagram given below, \(R\) is a small resistor, \(V_i\) is the input voltage between \(A\) & \(B\) while \(V_o\) is the output voltage between \(C\) & \(D\).
Consider the following two statements and mark the correct option.
Consider the following two statements and mark the correct option.
| (I) | \(\text{If}~V_i>2~\text{V}, ~\text{then}~V_o = V_i\) |
| (II) | \(\text{If}~V_i<2~\text{V}, ~\text{then}~V_o = 2~\text{V}\) |
| 1. | (I) is True. |
| 2. | (II) is True. |
| 3. | (I) and (II) are both True. |
| 4. | (I) and (II) are both False. |
Subtopic: Â PN junction |
Level 3: 35%-60%
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Given below are two statements:
| Assertion (A): | The resistance of a photodiode decreases when light having photons of sufficient energy is incident on it. |
| Reason (R): | When energetic photons fall on the \(\mathrm{p\text{-}n}\) junction of a photodiode, electron-hole pairs are created due to the breaking of the valence bonds. |
| 1. | (A) is True but (R) is False. |
| 2. | (A) is False but (R) is True. |
| 3. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
| 4. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
Subtopic: Â Applications of PN junction |
 73%
Level 2: 60%+
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Zener diode is not used for:
| 1. | oscillatory circuit | 2. | current amplification |
| 3. | voltage amplification | 4. | all of the above |
Subtopic: Â Applications of PN junction |
 69%
Level 2: 60%+
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The two inputs \((A)\) and \((B)\) of a logic circuit are shown along with the output \((Y)\) as functions of time. The 'highs' represent logic \(1\) and the 'lows' represents logic \(0.\) The correct truth table for this circuit is:
| 1. |
|
2. |
|
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| 3. |
|
4. |
|
Subtopic: Â Logic gates |
 80%
Level 1: 80%+
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