- 1(current)
Q. No.The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on:
| (a) | type of semiconductor material |
| (b) | amount of doping |
| (c) | temperature |
Which one of the following is correct?
| 1. | (a) and (b) only | 2. | (b) only |
| 3. | (b) and (c) only | 4. | (a), (b) and (c) |
Subtopic: Â PN junction |
 84%
Level 1: 80%+
NEET - 2014
Hints
In an unbiased - junction diode
1. p-type side is at higher potential than n-type side
2. p-type side is at lower potential than n-type side
3. Electric field is directed from side to side
4. Both 2 & 3
Subtopic: Â PN junction |
 61%
Level 2: 60%+
Hints
The \((I\text-V)\) characteristics of a \(\mathrm{p\text-n}\) junction diode is as shown. If \(R_1\) and \(R_2\) be the dynamic resistance of the \(\mathrm{p\text-n}\) junction when (i) a forward bias of \(1\) volt is applied and (ii) a forward bias of \(2\) volts is applied respectively, then \(\frac{R_1}{R_2}=?\)
1. \(160\)
2. \(16\)
3. \(1.6\)
4. \(0.16\)
Subtopic: Â PN junction |
 70%
Level 2: 60%+
Hints
In the following figure, the diodes which are forward biased are:
| (a) |  |
| (b) |  |
| (c) |  |
| (d) |  |
1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)
Subtopic: Â PN junction |
 86%
Level 1: 80%+
AIPMT - 2011
Hints
In the circuit shown in the diagram given below, \(R\) is a small resistor, \(V_i\) is the input voltage between \(A\) & \(B\) while \(V_o\) is the output voltage between \(C\) & \(D\).
Consider the following two statements and mark the correct option.
Consider the following two statements and mark the correct option.
| (I) | \(\text{If}~V_i>2~\text{V}, ~\text{then}~V_o = V_i\) |
| (II) | \(\text{If}~V_i<2~\text{V}, ~\text{then}~V_o = 2~\text{V}\) |
| 1. | (I) is True. |
| 2. | (II) is True. |
| 3. | (I) and (II) are both True. |
| 4. | (I) and (II) are both False. |
Subtopic: Â PN junction |
Level 3: 35%-60%
Hints
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i,\) when the diode is forward-biased?
(\(V_{AB}\) in volt, \(i\) in ampere)
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i,\) when the diode is forward-biased?
(\(V_{AB}\) in volt, \(i\) in ampere)
| 1. | \(V_{A B}=i\cdot5+0.6\) |
| 2. | \(V_{A B}=i\cdot5-0.6\) |
| 3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
| 4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |
Subtopic: Â PN junction |
Level 3: 35%-60%
Hints
The voltage \(V_{AB}=20~\text{V}\) at its peak value, and is sinusoidal in time. The current \(i\) (in amperes), when plotted as a function of time, is given by:
(consider the diodes as ideal.)
(consider the diodes as ideal.)
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Â PN junction |
Level 3: 35%-60%
Hints
For the above circuit, the applied voltage \(V(t)\) is periodic and linear, and is shown by the waveform below:
The current flowing through \(R_2\) varies as:
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Â PN junction |
 57%
Level 3: 35%-60%
Hints
The dynamic resistance of a diode is given by; \(R=\dfrac{26}{i(\text{mA})}~\Omega,\) where \(i\) is the diode current.
| Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
| Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
| 1. | Statement I is incorrect and Statement II is correct. |
| 2. | Both Statement I and Statement II are correct. |
| 3. | Both Statement I and Statement II are incorrect. |
| 4. | Statement I is correct and Statement II is incorrect. |
Subtopic: Â PN junction |
 73%
Level 2: 60%+
Hints
- 1(current)
Q. No.
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