The pair having only molecular solids among the following is -
1. Brass and SiC
2. Ammonium phosphate (NH4)3PO4
3. SiC and plastic
4. Tetra phosphorus decaoxide (P4O10) and I2
Niobium crystallizes in body-centred cubic structure. If the density is 8.55 g cm−3, the atomic radius of niobium (atomic mass 93 u) is -
1. 13.32 nm
2. 12.32 nm
3. 14.32 nm
4. 15.32 nm
(i) Ge is doped with In
(ii) Si is doped with B.
The semiconductors formed in the above cases are :
1. (i) n-type semiconductor (ii) p-type semiconductor .
2. (i) p-type semiconductor (ii) n-type semiconductor .
3. p-type semiconductor in both the cases.
4. n-type semiconductor in both the cases.
Select the correct option based on statements below:
Assertion (A): | Semiconductors are solids with conductivities in the range from 10-6 — 104 ohm-1 m-1. |
Reason (R): | Intermediate conductivity in semiconductors is due to a partially filled valence band. |
1. | Both (A) and (R) are true and (R) is the correct explanation of (A). |
2. | Both (A) and (R) are true but (R) is not the correct explanation of (A). |
3. | (A) is true but (R) is false. |
4. | (A) is false but (R) is true. |
Match the type of packing given in Column I with the items given in Column II.
Column I | Column II |
A. Square close packing in two dimensions | 1. Triangular voids |
B. Hexagonal close packing in two dimensions | 2. Pattern of spheres is repeated in every fourth layer |
C. Hexagonal close packing in three dimensions | 3. Coordination number = 4 |
D. Cubic close packing in three dimensions | 4. Pattern of sphere is repeated in alternate layers |
Codes
A | B | C | D | |
1. | 3 | 2 | 4 | 1 |
2. | 1 | 2 | 3 | 4 |
3. | 3 | 1 | 4 | 2 |
4. | 4 | 1 | 3 | 2 |
Match the items given in Column I with the items given in Column II.
Column I | Column II |
A. Mg in solid state | 1. p-type semiconductor |
B. MgCl2 in molten state | 2. n-type semiconductor |
C. Silicon with phosphorus | 3. Electrolytic conductors |
D. Germanium with boron | 4. Electronic conductors |
Codes
A | B | C | D | |
1. | 2 | 3 | 4 | 1 |
2. | 1 | 2 | 3 | 4 |
3. | 1 | 4 | 3 | 2 |
4. | 4 | 3 | 2 | 1 |
Match the types of defects given in Column I with the statement given in Column II.
Column I | Column II |
A. Impurity defect | 1. NaCl with anionic sites called F-centres |
B. Metal excess defect | 2. FeO with Fe3+ |
C. Metal deficiency defect | 3. NaCl with Sr2+ and some cationic sites vacant |
Codes
A | B | C | |
1. | 2 | 3 | 1 |
2. | 3 | 1 | 2 |
3 | 1 | 2 | 3 |
4. | 2 | 1 | 3 |
Match the defects given in Column I with the statements given in Column II.
Column I | Column II |
A. Simple vacancy defect | 1. Shown by non-ionic solids and increases the density of the solid |
B. Simple interstitial defect | 2. Shown by ionic solids and decreases the density of the solid |
C. Frenkel defect | 3. Shown by non-ionic solids and decreases the density of the solid |
D. Schottky defect | 4. Shown by ionic solids and density of the solid remains the same |
Codes
A | B | C | D | |
1. | 3 | 1 | 4 | 2 |
2. | 1 | 2 | 3 | 4 |
3. | 1 | 4 | 3 | 2 |
4. | 4 | 1 | 3 | 2 |
Correct statement among the following regarding conductivity in solids is -
1.
2.
3.
4.
The correct order of the packing efficiency in different types of unit cells is-
1. Fcc < Bcc < Simple cubic
2. Fcc > Bcc > Simple cubic
3. Fcc < Bcc > Simple cubic
4. Bcc < Fcc > Simple cubic