I. Mg(s)

II. TiO(s)

III. I₂(s)

IV. H₂O(s)

The insulator among the given examples is -

1. Only I

2. Only II

3. III and IV

4. II, III, and IV

Which of the following oxides behaves as a conductor or insulator depending upon temperature?

1.  TiO

2.  SiO₂

3.  TiO₃

4.  MgO

Cations are present in the interstitial sites in ............ .

1.  Frenkel defect.

2.  Schottky defect.

3.  Vacancy defect.

4.  Metal deficiency defect.

Schottky defect is observed in crystals when:

Chargewise p-type semiconductor is -

1. Positive.

2. Neutral.

3. Negative.

4. Depends on the concentration of p impurity.

To get a n-type semiconductor from silicon, it should be doped with a substance with valency -

1.  2

2.  1

3.  3

4.  5

AgBr(s) crystals shows the following defect/s 

I. Schottky defect

II. Frenkel defect

III. Metal excess defect

IV Metal deficiency defect

1.  I and II

2.  III and IV

3.  I and III

4.  II and IV

Doping causes-

1. Dislocation defect.

2. Schottky defect.

3. Frenkel defect.

4. Electronic defect.

Silicon doped with electron rich impurity forms -

1. p-type semiconductor.

2. n-type semiconductor.

3. Intrinsic semiconductor.

4. Insulator.

Dislocation defect is also known as-

1. Frenkel defect.

2. Schottky defect.

3. Non-stoichiometric defect.

4. Simple interstitial defect.